Influence of annealing temperature on the band structure of sol-gel Ba 0.65Sr0.35TiO3 thin films on n -type Si(100)

H. Lu; J. S. Pan; X. F. Chen; W. G. Zhu; O. K. Tan

doi:10.1063/1.2189828

Influence of annealing temperature on the band structure of sol-gel Ba _0.65Sr_0.35TiO₃ thin films on n -type Si(100)

H. Lu^*, J. S. Pan, X. F. Chen, W. G. Zhu, O. K. Tan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The annealing temperature effect on the band structure of Ba0.65 Sr0.35 Ti O3 (BST) thin films coated on n -type Si(100) substrate was investigated by ellipsometry and x-ray photoelectron spectroscopy. The band energy shifts of sol-gel BST films annealed at different temperatures are dependent on their developed microstructure. Related to the amorphous BST films annealed at 600 °C, the polycrystalline BST film annealed at 700 °C exhibits narrow band gap, upwards-moved Fermi level, and downwards-moved conduction band minimum, which are believed to contribute the enhanced field emission of BST-coated Si field emitter arrays.

Original language	English
Article number	132907
Journal	Applied Physics Letters
Volume	88
Issue number	13
DOIs	https://doi.org/10.1063/1.2189828
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Influence of annealing temperature on the band structure of sol-gel Ba 0.65Sr0.35TiO3 thin films on n -type Si(100)",

abstract = "The annealing temperature effect on the band structure of Ba0.65 Sr0.35 Ti O3 (BST) thin films coated on n -type Si(100) substrate was investigated by ellipsometry and x-ray photoelectron spectroscopy. The band energy shifts of sol-gel BST films annealed at different temperatures are dependent on their developed microstructure. Related to the amorphous BST films annealed at 600 °C, the polycrystalline BST film annealed at 700 °C exhibits narrow band gap, upwards-moved Fermi level, and downwards-moved conduction band minimum, which are believed to contribute the enhanced field emission of BST-coated Si field emitter arrays.",

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AU - Lu, H.

AU - Pan, J. S.

AU - Chen, X. F.

AU - Zhu, W. G.

AU - Tan, O. K.

PY - 2006

Y1 - 2006

N2 - The annealing temperature effect on the band structure of Ba0.65 Sr0.35 Ti O3 (BST) thin films coated on n -type Si(100) substrate was investigated by ellipsometry and x-ray photoelectron spectroscopy. The band energy shifts of sol-gel BST films annealed at different temperatures are dependent on their developed microstructure. Related to the amorphous BST films annealed at 600 °C, the polycrystalline BST film annealed at 700 °C exhibits narrow band gap, upwards-moved Fermi level, and downwards-moved conduction band minimum, which are believed to contribute the enhanced field emission of BST-coated Si field emitter arrays.

AB - The annealing temperature effect on the band structure of Ba0.65 Sr0.35 Ti O3 (BST) thin films coated on n -type Si(100) substrate was investigated by ellipsometry and x-ray photoelectron spectroscopy. The band energy shifts of sol-gel BST films annealed at different temperatures are dependent on their developed microstructure. Related to the amorphous BST films annealed at 600 °C, the polycrystalline BST film annealed at 700 °C exhibits narrow band gap, upwards-moved Fermi level, and downwards-moved conduction band minimum, which are believed to contribute the enhanced field emission of BST-coated Si field emitter arrays.

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Influence of annealing temperature on the band structure of sol-gel Ba _0.65Sr_0.35TiO₃ thin films on n -type Si(100)

Abstract

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