Influence of bonding parameters on the interaction between Cu and noneutectic Sn-In solder thin films

Wardhana A. Sasangka; Chee Lip Gan; Carl V. Thompson; Won Kyoung Choi; Jun Wei

doi:10.1007/s11664-011-1747-1

Influence of bonding parameters on the interaction between Cu and noneutectic Sn-In solder thin films

Wardhana A. Sasangka, Chee Lip Gan^*, Carl V. Thompson, Won Kyoung Choi, Jun Wei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional (3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μm. The effects of bonding time, bonding temperature, and postbonding annealing temperature on intermetallic compound (IMC) formation, joint microstructure, and shear strength were investigated using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffractometry (XRD), and shear testing. It is shown that bonding temperature plays an important role in increasing the true contact area, while the postbonding annealing temperature affects the formation of a single IMC, the g-phase [Cu ₆(Sn,In) ₅]. Both of these phenomena were found to contribute to the shear strength of the joints. It is shown that two-step bonding processes, involving short bonding times and longer postbonding annealing, can be used to optimize the bond formation for increased throughput.

Original language	English
Pages (from-to)	2329-2336
Number of pages	8
Journal	Journal of Electronic Materials
Volume	40
Issue number	11
DOIs	https://doi.org/10.1007/s11664-011-1747-1
Publication status	Published - Nov 2011
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Intermetallic compounds
Soldering
Thermocompression bonding
Thin film
True contact area

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10.1007/s11664-011-1747-1

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@article{c5cd37ec222e4167874b68e66ae980e4,

title = "Influence of bonding parameters on the interaction between Cu and noneutectic Sn-In solder thin films",

abstract = "Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional (3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μm. The effects of bonding time, bonding temperature, and postbonding annealing temperature on intermetallic compound (IMC) formation, joint microstructure, and shear strength were investigated using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffractometry (XRD), and shear testing. It is shown that bonding temperature plays an important role in increasing the true contact area, while the postbonding annealing temperature affects the formation of a single IMC, the g-phase [Cu 6(Sn,In) 5]. Both of these phenomena were found to contribute to the shear strength of the joints. It is shown that two-step bonding processes, involving short bonding times and longer postbonding annealing, can be used to optimize the bond formation for increased throughput.",

keywords = "Intermetallic compounds, Soldering, Thermocompression bonding, Thin film, True contact area",

author = "Sasangka, \{Wardhana A.\} and Gan, \{Chee Lip\} and Thompson, \{Carl V.\} and Choi, \{Won Kyoung\} and Jun Wei",

year = "2011",

month = nov,

doi = "10.1007/s11664-011-1747-1",

language = "English",

volume = "40",

pages = "2329--2336",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "11",

}

TY - JOUR

T1 - Influence of bonding parameters on the interaction between Cu and noneutectic Sn-In solder thin films

AU - Sasangka, Wardhana A.

AU - Gan, Chee Lip

AU - Thompson, Carl V.

AU - Choi, Won Kyoung

AU - Wei, Jun

PY - 2011/11

Y1 - 2011/11

N2 - Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional (3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μm. The effects of bonding time, bonding temperature, and postbonding annealing temperature on intermetallic compound (IMC) formation, joint microstructure, and shear strength were investigated using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffractometry (XRD), and shear testing. It is shown that bonding temperature plays an important role in increasing the true contact area, while the postbonding annealing temperature affects the formation of a single IMC, the g-phase [Cu 6(Sn,In) 5]. Both of these phenomena were found to contribute to the shear strength of the joints. It is shown that two-step bonding processes, involving short bonding times and longer postbonding annealing, can be used to optimize the bond formation for increased throughput.

AB - Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional (3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μm. The effects of bonding time, bonding temperature, and postbonding annealing temperature on intermetallic compound (IMC) formation, joint microstructure, and shear strength were investigated using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffractometry (XRD), and shear testing. It is shown that bonding temperature plays an important role in increasing the true contact area, while the postbonding annealing temperature affects the formation of a single IMC, the g-phase [Cu 6(Sn,In) 5]. Both of these phenomena were found to contribute to the shear strength of the joints. It is shown that two-step bonding processes, involving short bonding times and longer postbonding annealing, can be used to optimize the bond formation for increased throughput.

KW - Intermetallic compounds

KW - Soldering

KW - Thermocompression bonding

KW - Thin film

KW - True contact area

UR - http://www.scopus.com/inward/record.url?scp=83155181559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83155181559&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1747-1

DO - 10.1007/s11664-011-1747-1

M3 - Article

AN - SCOPUS:83155181559

SN - 0361-5235

VL - 40

SP - 2329

EP - 2336

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Influence of bonding parameters on the interaction between Cu and noneutectic Sn-In solder thin films

Abstract

ASJC Scopus Subject Areas

Keywords

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