Influence of Ce doping on leakage current in Ba0.5Sr 0.5TiO3 films

S. Y. Wang; B. L. Cheng; Can Wang; S. A.T. Redfern; S. Y. Dai; K. J. Jin; H. B. Lu; Y. L. Zhou; Z. H. Chen; G. Z. Yang

doi:10.1088/0022-3727/38/13/025

Influence of Ce doping on leakage current in Ba_0.5Sr _0.5TiO₃ films

S. Y. Wang, B. L. Cheng^*, Can Wang, S. A.T. Redfern, S. Y. Dai, K. J. Jin, H. B. Lu, Y. L. Zhou, Z. H. Chen, G. Z. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Undoped and Ce-doped Ba_0.5Sr_0.5TiO₃ (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO ₃ (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 × 10^-4 and 5.0 × 10^-5 versus 3.4 × 10^-2 A cm^-2 at 450 kV cm^-1; 4.0 × 10^-4 and 4.0 × 10^-5 versus 6.2 × 10^-3 A cm^-2 at -450 kV cm ^-1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce³⁺ doping, determined by x-ray photoelectron spectroscopy measurement.

Original language	English
Pages (from-to)	2253-2257
Number of pages	5
Journal	Journal Physics D: Applied Physics
Volume	38
Issue number	13
DOIs	https://doi.org/10.1088/0022-3727/38/13/025
Publication status	Published - Jul 7 2005
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/0022-3727/38/13/025

Cite this

@article{c35ffec358f04a8097006e1d77f418ca,

title = "Influence of Ce doping on leakage current in Ba0.5Sr 0.5TiO3 films",

abstract = "Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO 3 (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 × 10-4 and 5.0 × 10-5 versus 3.4 × 10-2 A cm-2 at 450 kV cm-1; 4.0 × 10-4 and 4.0 × 10-5 versus 6.2 × 10-3 A cm-2 at -450 kV cm -1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement.",

author = "Wang, {S. Y.} and Cheng, {B. L.} and Can Wang and Redfern, {S. A.T.} and Dai, {S. Y.} and Jin, {K. J.} and Lu, {H. B.} and Zhou, {Y. L.} and Chen, {Z. H.} and Yang, {G. Z.}",

year = "2005",

month = jul,

day = "7",

doi = "10.1088/0022-3727/38/13/025",

language = "English",

volume = "38",

pages = "2253--2257",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Influence of Ce doping on leakage current in Ba0.5Sr 0.5TiO3 films

AU - Wang, S. Y.

AU - Cheng, B. L.

AU - Wang, Can

AU - Redfern, S. A.T.

AU - Dai, S. Y.

AU - Jin, K. J.

AU - Lu, H. B.

AU - Zhou, Y. L.

AU - Chen, Z. H.

AU - Yang, G. Z.

PY - 2005/7/7

Y1 - 2005/7/7

N2 - Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO 3 (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 × 10-4 and 5.0 × 10-5 versus 3.4 × 10-2 A cm-2 at 450 kV cm-1; 4.0 × 10-4 and 4.0 × 10-5 versus 6.2 × 10-3 A cm-2 at -450 kV cm -1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement.

AB - Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO 3 (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 × 10-4 and 5.0 × 10-5 versus 3.4 × 10-2 A cm-2 at 450 kV cm-1; 4.0 × 10-4 and 4.0 × 10-5 versus 6.2 × 10-3 A cm-2 at -450 kV cm -1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement.

UR - http://www.scopus.com/inward/record.url?scp=21044436445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044436445&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/38/13/025

DO - 10.1088/0022-3727/38/13/025

M3 - Article

AN - SCOPUS:21044436445

SN - 0022-3727

VL - 38

SP - 2253

EP - 2257

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 13

ER -

Influence of Ce doping on leakage current in Ba_0.5Sr _0.5TiO₃ films

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this