Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

K. C. Aw; Z. Tsakadze; A. Lohani; S. Mhaisalkar

doi:10.1016/j.scriptamat.2008.08.039

Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

K. C. Aw^*, Z. Tsakadze, A. Lohani, S. Mhaisalkar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O₂ gas mixture. Nodules are present when sputtered at 1.8 W cm^-2. Resistivity is lowest and mobility highest at low r.f. power. The Zn₂In₂O₅ crystallite influences the film's resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.

Original language	English
Pages (from-to)	48-51
Number of pages	4
Journal	Scripta Materialia
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.scriptamat.2008.08.039
Publication status	Published - Jan 2009
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Keywords

Indium zinc oxide
IZO
R.f. magnetron sputtering

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10.1016/j.scriptamat.2008.08.039

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title = "Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films",

abstract = "We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O2 gas mixture. Nodules are present when sputtered at 1.8 W cm-2. Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film's resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.",

keywords = "Indium zinc oxide, IZO, R.f. magnetron sputtering",

author = "Aw, {K. C.} and Z. Tsakadze and A. Lohani and S. Mhaisalkar",

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T1 - Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

AU - Aw, K. C.

AU - Tsakadze, Z.

AU - Lohani, A.

AU - Mhaisalkar, S.

PY - 2009/1

Y1 - 2009/1

N2 - We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O2 gas mixture. Nodules are present when sputtered at 1.8 W cm-2. Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film's resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.

AB - We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O2 gas mixture. Nodules are present when sputtered at 1.8 W cm-2. Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film's resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.

KW - Indium zinc oxide

KW - IZO

KW - R.f. magnetron sputtering

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DO - 10.1016/j.scriptamat.2008.08.039

M3 - Article

AN - SCOPUS:53949083063

SN - 1359-6462

VL - 60

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JO - Scripta Materialia

JF - Scripta Materialia

IS - 1

ER -

Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

Abstract

ASJC Scopus Subject Areas

Keywords

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