Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence

Guangming Wang; Xiao Hu; Terence K.S. Wong

doi:10.1117/12.370351

Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence

Guangming Wang^*, Xiao Hu, Terence K.S. Wong

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Two-layer light emitting devices were fabricated using electrochemical deposited polybithiophene (PBTh) as the hole-transport layer and spin coated blend of polyoctylthiophene and a butadiene derivative as the emitting layer. It was found that the current density used for depositing polybithiophene greatly affects the effectiveness of the PBTh films as the hole-transport layers in enhancing the electroluminescent (EL) intensity and efficiency. Through analyzing the oxidation-reduction properties and conductivity of the PBTh films and the EL efficiency of the device, it can be concluded that there is an optimal current density for depositing the PBTh hole transport layer for the EL devices.

Original language	English
Pages (from-to)	484-491
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
DOIs	https://doi.org/10.1117/12.370351
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.370351

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title = "Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence",

abstract = "Two-layer light emitting devices were fabricated using electrochemical deposited polybithiophene (PBTh) as the hole-transport layer and spin coated blend of polyoctylthiophene and a butadiene derivative as the emitting layer. It was found that the current density used for depositing polybithiophene greatly affects the effectiveness of the PBTh films as the hole-transport layers in enhancing the electroluminescent (EL) intensity and efficiency. Through analyzing the oxidation-reduction properties and conductivity of the PBTh films and the EL efficiency of the device, it can be concluded that there is an optimal current density for depositing the PBTh hole transport layer for the EL devices.",

author = "Guangming Wang and Xiao Hu and Wong, {Terence K.S.}",

year = "1999",

doi = "10.1117/12.370351",

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volume = "3896",

pages = "484--491",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

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T1 - Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence

AU - Wang, Guangming

AU - Hu, Xiao

AU - Wong, Terence K.S.

PY - 1999

Y1 - 1999

N2 - Two-layer light emitting devices were fabricated using electrochemical deposited polybithiophene (PBTh) as the hole-transport layer and spin coated blend of polyoctylthiophene and a butadiene derivative as the emitting layer. It was found that the current density used for depositing polybithiophene greatly affects the effectiveness of the PBTh films as the hole-transport layers in enhancing the electroluminescent (EL) intensity and efficiency. Through analyzing the oxidation-reduction properties and conductivity of the PBTh films and the EL efficiency of the device, it can be concluded that there is an optimal current density for depositing the PBTh hole transport layer for the EL devices.

AB - Two-layer light emitting devices were fabricated using electrochemical deposited polybithiophene (PBTh) as the hole-transport layer and spin coated blend of polyoctylthiophene and a butadiene derivative as the emitting layer. It was found that the current density used for depositing polybithiophene greatly affects the effectiveness of the PBTh films as the hole-transport layers in enhancing the electroluminescent (EL) intensity and efficiency. Through analyzing the oxidation-reduction properties and conductivity of the PBTh films and the EL efficiency of the device, it can be concluded that there is an optimal current density for depositing the PBTh hole transport layer for the EL devices.

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VL - 3896

SP - 484

EP - 491

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999

ER -

Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence

Abstract

ASJC Scopus Subject Areas

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