TY - GEN
T1 - Integration of CNT in TSV (≤5 μm) for 3D IC application and its process challenges
AU - Ghosh, K.
AU - Yap, C. C.
AU - Tay, B. K.
AU - Tan, C. S.
PY - 2013
Y1 - 2013
N2 - The availability of high density TSVs depends on how smart we miniaturize the interconnect dimension in 3D IC package. A number of considerations include controllable TSV aspect ratio, pitch, and material selection. The International Technology Roadmap for Semiconductors (ITRS) has proposed scaling of TSV diameter down to as low as 2 μm in the future. However, with TSV scaling, the resistance of the TSV increases significantly. Carbon nanotubes (CNTs) could be a potential alternative material to Cu for VLSI interconnects applications, including TSV, due to their outstanding electrical, mechanical, and thermal properties. Here, we demonstrate a method to integrate carbon nanotubes (CNTs)-filled TSV under 5 μm diameter that are connected by metal-lines at the bottom and show the facile route of fabrication at low temperature regime. The process challenges are highlighted.
AB - The availability of high density TSVs depends on how smart we miniaturize the interconnect dimension in 3D IC package. A number of considerations include controllable TSV aspect ratio, pitch, and material selection. The International Technology Roadmap for Semiconductors (ITRS) has proposed scaling of TSV diameter down to as low as 2 μm in the future. However, with TSV scaling, the resistance of the TSV increases significantly. Carbon nanotubes (CNTs) could be a potential alternative material to Cu for VLSI interconnects applications, including TSV, due to their outstanding electrical, mechanical, and thermal properties. Here, we demonstrate a method to integrate carbon nanotubes (CNTs)-filled TSV under 5 μm diameter that are connected by metal-lines at the bottom and show the facile route of fabrication at low temperature regime. The process challenges are highlighted.
KW - 3D-IC
KW - Carbon nanotube
KW - Through-silicon via
KW - Wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=84893976836&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893976836&partnerID=8YFLogxK
U2 - 10.1109/3DIC.2013.6702369
DO - 10.1109/3DIC.2013.6702369
M3 - Conference contribution
AN - SCOPUS:84893976836
SN - 9781467364843
T3 - 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
BT - 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
T2 - 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
Y2 - 2 October 2013 through 4 October 2013
ER -