Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng; V. Arbet-Engels; R. P.G. Karunasiri; K. L. Wang; F. Watt; K. K. Lee; A. T.S. Wee; H. H. Hng; K. P.J. Williams

doi:10.1109/EDMS.1994.771134

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng, V. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang, F. Watt, K. K. Lee, A. T.S. Wee, H. H. Hng, K. P.J. Williams

Research output: Contribution to conference › Paper › peer-review

Abstract

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771134
Publication status	Published - 1994
Externally published	Yes
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan, Province of China Duration: Jul 12 1994 → Jul 15 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	7/12/94 → 7/15/94

Bibliographical note

Publisher Copyright:
© 1994 IEEE.

ASJC Scopus Subject Areas

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDMS.1994.771134

Cite this

Feng, Z. C., Arbet-Engels, V., Karunasiri, R. P. G., Wang, K. L., Watt, F., Lee, K. K., Wee, A. T. S., Hng, H. H., & Williams, K. P. J. (1994). Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, Province of China. https://doi.org/10.1109/EDMS.1994.771134

@conference{9696ba0353ed4a5cb5387974a6fc8b00,

title = "Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.",

author = "Feng, {Z. C.} and V. Arbet-Engels and Karunasiri, {R. P.G.} and Wang, {K. L.} and F. Watt and Lee, {K. K.} and Wee, {A. T.S.} and Hng, {H. H.} and Williams, {K. P.J.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771134",

language = "English",

}

Feng, ZC, Arbet-Engels, V, Karunasiri, RPG, Wang, KL, Watt, F, Lee, KK, Wee, ATS, Hng, HH & Williams, KPJ 1994, 'Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy', Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, Province of China, 7/12/94 - 7/15/94. https://doi.org/10.1109/EDMS.1994.771134

TY - CONF

T1 - Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

AU - Feng, Z. C.

AU - Arbet-Engels, V.

AU - Karunasiri, R. P.G.

AU - Wang, K. L.

AU - Watt, F.

AU - Lee, K. K.

AU - Wee, A. T.S.

AU - Hng, H. H.

AU - Williams, K. P.J.

PY - 1994

Y1 - 1994

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

UR - http://www.scopus.com/inward/record.url?scp=85063576933&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063576933&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771134

DO - 10.1109/EDMS.1994.771134

M3 - Paper

AN - SCOPUS:85063576933

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Abstract

Conference

Bibliographical note

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this