Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy

J. Y. Tay; J. Cheah; S. Chef; X. M. Zeng; Q. Liu; C. L. Gan

doi:10.1109/IPFA58228.2023.10249197

Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy

J. Y. Tay, J. Cheah, S. Chef, X. M. Zeng, Q. Liu, C. L. Gan^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Emerging non-volatile memories (NVM) are alternatives to the conventional charge storage-based memories such as Flash, static random-access memory (SRAM) and dynamic random-access memory (DRAM). They are typically resistance based and able to store data depending on its high or low resistance state. The possibility of reading back this stored data may help in the digital forensics field, but also poses a security concern. In this paper, front-side sample preparation will be discussed for data retrieval with conductive probe atomic force microscopy (CP-AFM) method. The application has been demonstrated on a 4 Mbit Resistive RAM (RRAM).

Original language	English
Title of host publication	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350301649
DOIs	https://doi.org/10.1109/IPFA58228.2023.10249197
Publication status	Published - 2023
Externally published	Yes
Event	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia Duration: Jul 24 2023 → Jul 27 2023

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2023-July

Conference

Conference	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Country/Territory	Malaysia
City	Pulau Pinang
Period	7/24/23 → 7/27/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

conductive probe atomic force microscopy
data retrieval
Emerging Non-Volatile Memory
front-side sample preparation

Access to Document

10.1109/IPFA58228.2023.10249197

Cite this

Tay, J. Y., Cheah, J., Chef, S., Zeng, X. M., Liu, Q., & Gan, C. L. (2023). Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA58228.2023.10249197

Tay, J. Y. ; Cheah, J. ; Chef, S. et al. / Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy. 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy",

abstract = "Emerging non-volatile memories (NVM) are alternatives to the conventional charge storage-based memories such as Flash, static random-access memory (SRAM) and dynamic random-access memory (DRAM). They are typically resistance based and able to store data depending on its high or low resistance state. The possibility of reading back this stored data may help in the digital forensics field, but also poses a security concern. In this paper, front-side sample preparation will be discussed for data retrieval with conductive probe atomic force microscopy (CP-AFM) method. The application has been demonstrated on a 4 Mbit Resistive RAM (RRAM).",

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note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 ; Conference date: 24-07-2023 Through 27-07-2023",

year = "2023",

doi = "10.1109/IPFA58228.2023.10249197",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

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Tay, JY, Cheah, J, Chef, S, Zeng, XM, Liu, Q & Gan, CL 2023, Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy. in 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2023-July, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023, Pulau Pinang, Malaysia, 7/24/23. https://doi.org/10.1109/IPFA58228.2023.10249197

Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy. / Tay, J. Y.; Cheah, J.; Chef, S. et al.
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tay, J. Y.

AU - Cheah, J.

AU - Chef, S.

AU - Zeng, X. M.

AU - Liu, Q.

AU - Gan, C. L.

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AB - Emerging non-volatile memories (NVM) are alternatives to the conventional charge storage-based memories such as Flash, static random-access memory (SRAM) and dynamic random-access memory (DRAM). They are typically resistance based and able to store data depending on its high or low resistance state. The possibility of reading back this stored data may help in the digital forensics field, but also poses a security concern. In this paper, front-side sample preparation will be discussed for data retrieval with conductive probe atomic force microscopy (CP-AFM) method. The application has been demonstrated on a 4 Mbit Resistive RAM (RRAM).

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Tay JY, Cheah J, Chef S, Zeng XM, Liu Q, Gan CL. Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA58228.2023.10249197

Investigation on Data Retrieval in Emerging Non-Volatile Memory Devices Using Conductive Probe Atomic Force Microscopy

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this