LaAlO₃ nanocrystals embedded in amorphous Lu₂O ₃ high-k gate dielectric for floating gate memory application

A novel method to fabricate the memory structure of LaAl O3 nanocrystals embedded in amorphous Lu2 O3 high- k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAl O3 nanocrystals are estimated to be about 6 nm and 1.1× 1012 cm-2, respectively. Superior performances in terms of a large memory window, long data retention, and robust endurance were observed.