Laser annealed Ni(Ti) silicides formation

Y. Setiawan; P. S. Lee; K. L. Pey; X. C. Wang; G. C. Lim; F. L. Chow

doi:10.1109/RTP.2006.368004

Laser annealed Ni(Ti) silicides formation

Y. Setiawan^*, P. S. Lee, K. L. Pey, X. C. Wang, G. C. Lim, F. L. Chow

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni₃Si₂ was found to be the first suicide formed at 600°C and stable up to 900°C. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiO_x overlayer on the surface during rapid solidification.

Original language	English
Title of host publication	14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Pages	223-227
Number of pages	5
DOIs	https://doi.org/10.1109/RTP.2006.368004
Publication status	Published - 2006
Externally published	Yes
Event	14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 - Kyoto, Japan Duration: Oct 10 2006 → Oct 13 2006

Publication series

Name	14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Conference

Conference	14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Country/Territory	Japan
City	Kyoto
Period	10/10/06 → 10/13/06

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/RTP.2006.368004

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Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., Lim, G. C., & Chow, F. L. (2006). Laser annealed Ni(Ti) silicides formation. In 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 (pp. 223-227). Article 4223131 (14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006). https://doi.org/10.1109/RTP.2006.368004

@inproceedings{dff5464518944345936411ce491ea3f6,

title = "Laser annealed Ni(Ti) silicides formation",

abstract = "Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first suicide formed at 600°C and stable up to 900°C. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification.",

author = "Y. Setiawan and Lee, {P. S.} and Pey, {K. L.} and Wang, {X. C.} and Lim, {G. C.} and Chow, {F. L.}",

year = "2006",

doi = "10.1109/RTP.2006.368004",

language = "English",

isbn = "142440648X",

series = "14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006",

pages = "223--227",

booktitle = "14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006",

note = "14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 ; Conference date: 10-10-2006 Through 13-10-2006",

}

Setiawan, Y, Lee, PS, Pey, KL, Wang, XC, Lim, GC & Chow, FL 2006, Laser annealed Ni(Ti) silicides formation. in 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006., 4223131, 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006, pp. 223-227, 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006, Kyoto, Japan, 10/10/06. https://doi.org/10.1109/RTP.2006.368004

Laser annealed Ni(Ti) silicides formation. / Setiawan, Y.; Lee, P. S.; Pey, K. L. et al.
14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006. 2006. p. 223-227 4223131 (14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Laser annealed Ni(Ti) silicides formation

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Pey, K. L.

AU - Wang, X. C.

AU - Lim, G. C.

AU - Chow, F. L.

PY - 2006

Y1 - 2006

N2 - Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first suicide formed at 600°C and stable up to 900°C. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification.

AB - Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first suicide formed at 600°C and stable up to 900°C. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification.

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UR - http://www.scopus.com/inward/citedby.url?scp=48349091032&partnerID=8YFLogxK

U2 - 10.1109/RTP.2006.368004

DO - 10.1109/RTP.2006.368004

M3 - Conference contribution

AN - SCOPUS:48349091032

SN - 142440648X

SN - 9781424406487

T3 - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

SP - 223

EP - 227

BT - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

T2 - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Y2 - 10 October 2006 through 13 October 2006

ER -

Laser annealed Ni(Ti) silicides formation

Abstract

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Conference

ASJC Scopus Subject Areas

UN SDGs

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