Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed si1-x Gex /Si substrates

Y. Setiawan; P. S. Lee; S. Balakumar; K. L. Pey; X. C. Wang

doi:10.1149/1.2953682

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed si1-x Gex /Si substrates

Y. Setiawan^*, P. S. Lee, S. Balakumar, K. L. Pey, X. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.

Original language	English
Pages (from-to)	H262-H265
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	9
DOIs	https://doi.org/10.1149/1.2953682
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2953682

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abstract = "Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40\% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.",

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T1 - Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed si1-x Gex /Si substrates

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Balakumar, S.

AU - Pey, K. L.

AU - Wang, X. C.

PY - 2008

Y1 - 2008

N2 - Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.

AB - Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced Ni(Pt) germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.

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JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed si1-x Gex /Si substrates

Abstract

ASJC Scopus Subject Areas

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