Abstract
Laser-induced Ni(Pt) germanosilicide formation on Si1-x Gex Si substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm-2 (just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of Si1-x Gex alloy and Si substrates. Formation of highly textured [Ni1-v (Pt)v] (Si1-y Gey) phase was detected in the sample after 20-pulsed laser thermal annealing at 0.4 J cm-2. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.
Original language | English |
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Article number | 073108 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
ASJC Scopus Subject Areas
- Physics and Astronomy (miscellaneous)