Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays

Dong Sik Kim; Ran Ji; Hong Jin Fan; Frank Bertram; Roland Scholz; Armin Dadgar; Kornelius Nielsch; Alois Krost; Jürgen Christen; Ulrich Gösele; Margit Zacharias

doi:10.1002/smll.200600307

Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays

Dong Sik Kim^*, Ran Ji, Hong Jin Fan, Frank Bertram, Roland Scholz, Armin Dadgar, Kornelius Nielsch, Alois Krost, Jürgen Christen, Ulrich Gösele, Margit Zacharias

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

95 Citations (Scopus)

Abstract

An effective and reliable approach for the preparation of large-area, long-range ordered ZnO nanowire (NW) arrays is developed by combining laser-interference lithography (LIL) for templating and a chemical-vapor- transport process for nanowire growth. The ZnO nanowires show a narrow diameter distribution and uniform spacing. A liquid-phase-assisted vapor-solid growth process is responsible for the growth of ZnO NWs on GaN/Si substrates. The CL spectrum of the ZnO NW arrays is dominated by bound-exciton emissions. Intensity mapping of the neutral-donor bound-exciton line allows visualization of individual nanowires. The patterning and growth approach is suitable for application in electronics, optoelectronics, and biological sensing devices, for which a regular array of well-defined ZnO nanowires is required.

Original language	English
Pages (from-to)	76-80
Number of pages	5
Journal	Small
Volume	3
Issue number	1
DOIs	https://doi.org/10.1002/smll.200600307
Publication status	Published - Jan 2007
Externally published	Yes

ASJC Scopus Subject Areas

Biotechnology
Biomaterials
General Chemistry
General Materials Science

Keywords

Arrays
Chemical vapor transport
Lithography
Nanowires
Semiconductors

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10.1002/smll.200600307

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title = "Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays",

abstract = "An effective and reliable approach for the preparation of large-area, long-range ordered ZnO nanowire (NW) arrays is developed by combining laser-interference lithography (LIL) for templating and a chemical-vapor- transport process for nanowire growth. The ZnO nanowires show a narrow diameter distribution and uniform spacing. A liquid-phase-assisted vapor-solid growth process is responsible for the growth of ZnO NWs on GaN/Si substrates. The CL spectrum of the ZnO NW arrays is dominated by bound-exciton emissions. Intensity mapping of the neutral-donor bound-exciton line allows visualization of individual nanowires. The patterning and growth approach is suitable for application in electronics, optoelectronics, and biological sensing devices, for which a regular array of well-defined ZnO nanowires is required.",

keywords = "Arrays, Chemical vapor transport, Lithography, Nanowires, Semiconductors",

author = "Kim, {Dong Sik} and Ran Ji and Fan, {Hong Jin} and Frank Bertram and Roland Scholz and Armin Dadgar and Kornelius Nielsch and Alois Krost and J{\"u}rgen Christen and Ulrich G{\"o}sele and Margit Zacharias",

year = "2007",

month = jan,

doi = "10.1002/smll.200600307",

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volume = "3",

pages = "76--80",

journal = "Small",

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T1 - Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays

AU - Kim, Dong Sik

AU - Ji, Ran

AU - Fan, Hong Jin

AU - Bertram, Frank

AU - Scholz, Roland

AU - Dadgar, Armin

AU - Nielsch, Kornelius

AU - Krost, Alois

AU - Christen, Jürgen

AU - Gösele, Ulrich

AU - Zacharias, Margit

PY - 2007/1

Y1 - 2007/1

N2 - An effective and reliable approach for the preparation of large-area, long-range ordered ZnO nanowire (NW) arrays is developed by combining laser-interference lithography (LIL) for templating and a chemical-vapor- transport process for nanowire growth. The ZnO nanowires show a narrow diameter distribution and uniform spacing. A liquid-phase-assisted vapor-solid growth process is responsible for the growth of ZnO NWs on GaN/Si substrates. The CL spectrum of the ZnO NW arrays is dominated by bound-exciton emissions. Intensity mapping of the neutral-donor bound-exciton line allows visualization of individual nanowires. The patterning and growth approach is suitable for application in electronics, optoelectronics, and biological sensing devices, for which a regular array of well-defined ZnO nanowires is required.

AB - An effective and reliable approach for the preparation of large-area, long-range ordered ZnO nanowire (NW) arrays is developed by combining laser-interference lithography (LIL) for templating and a chemical-vapor- transport process for nanowire growth. The ZnO nanowires show a narrow diameter distribution and uniform spacing. A liquid-phase-assisted vapor-solid growth process is responsible for the growth of ZnO NWs on GaN/Si substrates. The CL spectrum of the ZnO NW arrays is dominated by bound-exciton emissions. Intensity mapping of the neutral-donor bound-exciton line allows visualization of individual nanowires. The patterning and growth approach is suitable for application in electronics, optoelectronics, and biological sensing devices, for which a regular array of well-defined ZnO nanowires is required.

KW - Arrays

KW - Chemical vapor transport

KW - Lithography

KW - Nanowires

KW - Semiconductors

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U2 - 10.1002/smll.200600307

DO - 10.1002/smll.200600307

M3 - Review article

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SN - 1613-6810

VL - 3

SP - 76

EP - 80

JO - Small

JF - Small

IS - 1

ER -

Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays

Abstract

ASJC Scopus Subject Areas

Keywords

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