Layer inversion of Ni(Pt)Si on mixed phase Si films

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; T. Osipowicz; A. See

doi:10.1149/1.1447442

Layer inversion of Ni(Pt)Si on mixed phase Si films

P. S. Lee^*, K. L. Pey, D. Mangelinck, J. Ding, T. Osipowicz, A. See

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi₂ precipitates as seeds besides the preexisting Si crystallites.

Original language	English
Pages (from-to)	G15-G17
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	3
DOIs	https://doi.org/10.1149/1.1447442
Publication status	Published - Mar 2002
Externally published	Yes

ASJC Scopus Subject Areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Layer inversion of Ni(Pt)Si on mixed phase Si films",

abstract = "The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.",

author = "Lee, {P. S.} and Pey, {K. L.} and D. Mangelinck and J. Ding and T. Osipowicz and A. See",

year = "2002",

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doi = "10.1149/1.1447442",

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journal = "Electrochemical and Solid-State Letters",

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T1 - Layer inversion of Ni(Pt)Si on mixed phase Si films

AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Osipowicz, T.

AU - See, A.

PY - 2002/3

Y1 - 2002/3

N2 - The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.

AB - The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.

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DO - 10.1149/1.1447442

M3 - Article

AN - SCOPUS:0036502059

SN - 1099-0062

VL - 5

SP - G15-G17

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

Layer inversion of Ni(Pt)Si on mixed phase Si films

Abstract

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