Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation

C. L. Yuan; P. Darmawan; M. Y. Chan; P. S. Lee

doi:10.1209/0295-5075/77/67001

Leakage conduction mechanism of amorphous Lu₂O₃ high-k dielectric films fabricated by pulsed laser ablation

C. L. Yuan^*, P. Darmawan, M. Y. Chan, P. S. Lee

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Amorphous Lu₂O₃ thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10 ^-5 A/cm² at 1 V accumulation bias was obtained for 4.5 nm thick Lu₂O₃ thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu₂O₃ films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.

Original language	English
Article number	67001
Journal	Europhysics Letters
Volume	77
Issue number	6
DOIs	https://doi.org/10.1209/0295-5075/77/67001
Publication status	Published - Mar 1 2007
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

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title = "Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation",

abstract = "Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10 -5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.",

author = "Yuan, {C. L.} and P. Darmawan and Chan, {M. Y.} and Lee, {P. S.}",

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T1 - Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation

AU - Yuan, C. L.

AU - Darmawan, P.

AU - Chan, M. Y.

AU - Lee, P. S.

PY - 2007/3/1

Y1 - 2007/3/1

N2 - Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10 -5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.

AB - Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10 -5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.

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Leakage conduction mechanism of amorphous Lu₂O₃ high-k dielectric films fabricated by pulsed laser ablation

Abstract

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