LiTaO3 films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method

S. D. Cheng; Y. Zhou; C. H. Kam; X. Q. Han; W. X. Que; Y. L. Lam; Y. C. Chan; J. T. Oh; W. S. Gan

doi:10.1016/S0167-577X(00)00014-8

LiTaO₃ films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method

S. D. Cheng^*, Y. Zhou, C. H. Kam, X. Q. Han, W. X. Que, Y. L. Lam, Y. C. Chan, J. T. Oh, W. S. Gan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

LiTaO₃ films with c-axis preferred orientation have been prepared on Si(111) substrates using sol-gel spin-coating and rapid thermal annealing. Hydrogen-terminated silicon surface, preheating temperature, and unidirectional heat flow during the heat treatment are essential factors for the c-axis texture. The texture is useful in pyroelectric, metal-ferroelectric-semiconductor (MFS) nonvolatile memory, and integrated optics applications.

Original language	English
Pages (from-to)	125-129
Number of pages	5
Journal	Materials Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1016/S0167-577X(00)00014-8
Publication status	Published - Jun 2000
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "LiTaO3 films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method",

abstract = "LiTaO3 films with c-axis preferred orientation have been prepared on Si(111) substrates using sol-gel spin-coating and rapid thermal annealing. Hydrogen-terminated silicon surface, preheating temperature, and unidirectional heat flow during the heat treatment are essential factors for the c-axis texture. The texture is useful in pyroelectric, metal-ferroelectric-semiconductor (MFS) nonvolatile memory, and integrated optics applications.",

author = "Cheng, {S. D.} and Y. Zhou and Kam, {C. H.} and Han, {X. Q.} and Que, {W. X.} and Lam, {Y. L.} and Chan, {Y. C.} and Oh, {J. T.} and Gan, {W. S.}",

year = "2000",

month = jun,

doi = "10.1016/S0167-577X(00)00014-8",

language = "English",

volume = "44",

pages = "125--129",

journal = "Materials Letters",

issn = "0167-577X",

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T1 - LiTaO3 films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method

AU - Cheng, S. D.

AU - Zhou, Y.

AU - Kam, C. H.

AU - Han, X. Q.

AU - Que, W. X.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Oh, J. T.

AU - Gan, W. S.

PY - 2000/6

Y1 - 2000/6

N2 - LiTaO3 films with c-axis preferred orientation have been prepared on Si(111) substrates using sol-gel spin-coating and rapid thermal annealing. Hydrogen-terminated silicon surface, preheating temperature, and unidirectional heat flow during the heat treatment are essential factors for the c-axis texture. The texture is useful in pyroelectric, metal-ferroelectric-semiconductor (MFS) nonvolatile memory, and integrated optics applications.

AB - LiTaO3 films with c-axis preferred orientation have been prepared on Si(111) substrates using sol-gel spin-coating and rapid thermal annealing. Hydrogen-terminated silicon surface, preheating temperature, and unidirectional heat flow during the heat treatment are essential factors for the c-axis texture. The texture is useful in pyroelectric, metal-ferroelectric-semiconductor (MFS) nonvolatile memory, and integrated optics applications.

UR - http://www.scopus.com/inward/record.url?scp=0033700447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033700447&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(00)00014-8

DO - 10.1016/S0167-577X(00)00014-8

M3 - Article

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SN - 0167-577X

VL - 44

SP - 125

EP - 129

JO - Materials Letters

JF - Materials Letters

IS - 3

ER -

LiTaO₃ films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method

Abstract

ASJC Scopus Subject Areas

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