Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique

T. L. Tan; A. C.T. Quah; C. L. Gan; J. C.H. Phang; C. M. Chua; C. M. Ng; A. Y. Du

Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique

T. L. Tan, A. C.T. Quah, C. L. Gan, J. C.H. Phang, C. M. Chua, C. M. Ng, A. Y. Du

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA.

Original language	English
Title of host publication	ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis
Pages	156-160
Number of pages	5
Publication status	Published - 2007
Externally published	Yes
Event	33rd International Symposium for Testing and Failure Analysis, ISTFA 2007 - San Jose, CA, United States Duration: Nov 4 2007 → Nov 8 2007

Publication series

Name	Conference Proceedings from the International Symposium for Testing and Failure Analysis

Conference

Conference	33rd International Symposium for Testing and Failure Analysis, ISTFA 2007
Country/Territory	United States
City	San Jose, CA
Period	11/4/07 → 11/8/07

ASJC Scopus Subject Areas

Control and Systems Engineering
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Cite this

Tan, T. L., Quah, A. C. T., Gan, C. L., Phang, J. C. H., Chua, C. M., Ng, C. M., & Du, A. Y. (2007). Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. In ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis (pp. 156-160). (Conference Proceedings from the International Symposium for Testing and Failure Analysis).

@inproceedings{c0a2392d5ed54af79a20fd217710e858,

title = "Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique",

abstract = "In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA.",

author = "Tan, \{T. L.\} and Quah, \{A. C.T.\} and Gan, \{C. L.\} and Phang, \{J. C.H.\} and Chua, \{C. M.\} and Ng, \{C. M.\} and Du, \{A. Y.\}",

year = "2007",

language = "English",

isbn = "0871708639",

series = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",

pages = "156--160",

booktitle = "ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis",

note = "33rd International Symposium for Testing and Failure Analysis, ISTFA 2007 ; Conference date: 04-11-2007 Through 08-11-2007",

}

Tan, TL, Quah, ACT, Gan, CL, Phang, JCH, Chua, CM, Ng, CM & Du, AY 2007, Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. in ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis. Conference Proceedings from the International Symposium for Testing and Failure Analysis, pp. 156-160, 33rd International Symposium for Testing and Failure Analysis, ISTFA 2007, San Jose, CA, United States, 11/4/07.

Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. / Tan, T. L.; Quah, A. C.T.; Gan, C. L. et al.
ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis. 2007. p. 156-160 (Conference Proceedings from the International Symposium for Testing and Failure Analysis).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique

AU - Tan, T. L.

AU - Quah, A. C.T.

AU - Gan, C. L.

AU - Phang, J. C.H.

AU - Chua, C. M.

AU - Ng, C. M.

AU - Du, A. Y.

PY - 2007

Y1 - 2007

N2 - In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA.

AB - In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA.

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M3 - Conference contribution

AN - SCOPUS:49249109350

SN - 0871708639

SN - 9780871708632

T3 - Conference Proceedings from the International Symposium for Testing and Failure Analysis

SP - 156

EP - 160

BT - ISTFA 2007 - Proceedings of the 33rd International Symposium for Testing and Failure Analysis

T2 - 33rd International Symposium for Testing and Failure Analysis, ISTFA 2007

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ER -

Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

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