Low Dielectric Constant Organosilicate Films Prepared by Sol-Gel and Templating Methods

Low dielectric constant organosilicate films with controllable microstructure have been successfully synthesized by multiple-step sol-gel process and templating method, which are the two basic methods to establish porous network in the films. Ultra-low dielectric constant (k) of around 2.0 can be achieved for both films. The microstructure such as porosity, pore interconnection and pore size of the two types of the films have been studied and compared. It has been found that the sol-gel films have a higher level of porosity comparing to the templating films to obtain the same k value. The sol-gel film has a majority of closed pores with pore size around 5 nm. The templating film has a closed pore structure with pore size around 10 nm. Preliminary results present a very positive prospective for intermetal dielectric applications.