Low dielectric constant porous silsesquioxane films: Effect of thermal treatment

Y. K. Siew; G. Sarkar; X. Hu; Y. Xu; A. See

doi:10.1557/proc-612-d5.15.1

Low dielectric constant porous silsesquioxane films: Effect of thermal treatment

Y. K. Siew^*, G. Sarkar, X. Hu, Y. Xu, A. See

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behaviour of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.

Original language	English
Pages (from-to)	D5151-D5156
Journal	Materials Research Society Symposium - Proceedings
Volume	612
DOIs	https://doi.org/10.1557/proc-612-d5.15.1
Publication status	Published - 2000
Externally published	Yes
Event	Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States Duration: Apr 23 2000 → Apr 27 2000

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-612-d5.15.1

Cite this

@article{99001d73b4754368acba3917a2a0ce54,

title = "Low dielectric constant porous silsesquioxane films: Effect of thermal treatment",

abstract = "Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behaviour of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.",

author = "Siew, \{Y. K.\} and G. Sarkar and X. Hu and Y. Xu and A. See",

year = "2000",

doi = "10.1557/proc-612-d5.15.1",

language = "English",

volume = "612",

pages = "D5151--D5156",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics ; Conference date: 23-04-2000 Through 27-04-2000",

}

TY - JOUR

T1 - Low dielectric constant porous silsesquioxane films

T2 - Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics

AU - Siew, Y. K.

AU - Sarkar, G.

AU - Hu, X.

AU - Xu, Y.

AU - See, A.

PY - 2000

Y1 - 2000

N2 - Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behaviour of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.

AB - Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behaviour of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.

UR - http://www.scopus.com/inward/record.url?scp=0034431105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034431105&partnerID=8YFLogxK

U2 - 10.1557/proc-612-d5.15.1

DO - 10.1557/proc-612-d5.15.1

M3 - Conference article

AN - SCOPUS:0034431105

SN - 0272-9172

VL - 612

SP - D5151-D5156

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 23 April 2000 through 27 April 2000

ER -

Low dielectric constant porous silsesquioxane films: Effect of thermal treatment

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this