Low Temperature Deposition of Zinc Oxide Films

H. W. Lee; Y. G. Wang; S. P. Lau; B. K. Tay

doi:10.1557/proc-763-b5.16

Low Temperature Deposition of Zinc Oxide Films

H. W. Lee^*, Y. G. Wang, S. P. Lau, B. K. Tay

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

Abstract

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O₂ was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10^-3 Ωcm, and that for Aldoped films was 8×10^-4 Ωcm. The carrier concentration was found to increase with Al doping.

Original language	English
Pages (from-to)	207-212
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	763
DOIs	https://doi.org/10.1557/proc-763-b5.16
Publication status	Published - 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low Temperature Deposition of Zinc Oxide Films",

abstract = "A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Aldoped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.",

author = "Lee, {H. W.} and Wang, {Y. G.} and Lau, {S. P.} and Tay, {B. K.}",

year = "2003",

doi = "10.1557/proc-763-b5.16",

language = "English",

volume = "763",

pages = "207--212",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics ; Conference date: 22-04-2003 Through 25-04-2003",

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TY - JOUR

T1 - Low Temperature Deposition of Zinc Oxide Films

AU - Lee, H. W.

AU - Wang, Y. G.

AU - Lau, S. P.

AU - Tay, B. K.

PY - 2003

Y1 - 2003

N2 - A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Aldoped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

AB - A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Aldoped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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U2 - 10.1557/proc-763-b5.16

DO - 10.1557/proc-763-b5.16

M3 - Conference article

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SN - 0272-9172

VL - 763

SP - 207

EP - 212

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Low Temperature Deposition of Zinc Oxide Films

Abstract

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