Materials and electrical characterization of Er (Si1-x Gex) 2-y films formed on Si1-x Gex (001) (x=0-0.3) via Rapid Thermal Annealing

E. J. Tan; K. L. Pey; D. Z. Chi; P. S. Lee; Y. Setiawan; K. M. Hoe

doi:10.1149/1.2800761

Materials and electrical characterization of Er (Si1-x Gex) 2-y films formed on Si1-x Gex (001) (x=0-0.3) via Rapid Thermal Annealing

E. J. Tan^*, K. L. Pey, D. Z. Chi, P. S. Lee, Y. Setiawan, K. M. Hoe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We studied erbium germanosilicide films formed on relaxed p-type Si1-x Gex (100) (x=0-0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500-700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er (Si1-x Gex) 2-y with orientation relationship Er (Si1-x Gex) 2-y (1 1- 00) - [0001] ∥ Si1-x Gex (001) [110] or Er (Si1-x Gex) 2-y (1 1- 00) [0001] ∥ Si1-x Gex (001) [1- 10]. Schottky barrier height, φBp, of the Er (Si1-x Gex) 2-y p- Si1-x Gex (100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, φBneff, from 0.33 to 0.37 eV.

Original language	English
Pages (from-to)	H26-H30
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	1
DOIs	https://doi.org/10.1149/1.2800761
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Materials and electrical characterization of Er (Si1-x Gex) 2-y films formed on Si1-x Gex (001) (x=0-0.3) via Rapid Thermal Annealing",

abstract = "We studied erbium germanosilicide films formed on relaxed p-type Si1-x Gex (100) (x=0-0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500-700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er (Si1-x Gex) 2-y with orientation relationship Er (Si1-x Gex) 2-y (1 1- 00) - [0001] ∥ Si1-x Gex (001) [110] or Er (Si1-x Gex) 2-y (1 1- 00) [0001] ∥ Si1-x Gex (001) [1- 10]. Schottky barrier height, φBp, of the Er (Si1-x Gex) 2-y p- Si1-x Gex (100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30\%), implying a slight increase in its barrier height for electrons, φBneff, from 0.33 to 0.37 eV.",

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AU - Tan, E. J.

AU - Pey, K. L.

AU - Chi, D. Z.

AU - Lee, P. S.

AU - Setiawan, Y.

AU - Hoe, K. M.

PY - 2008

Y1 - 2008

N2 - We studied erbium germanosilicide films formed on relaxed p-type Si1-x Gex (100) (x=0-0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500-700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er (Si1-x Gex) 2-y with orientation relationship Er (Si1-x Gex) 2-y (1 1- 00) - [0001] ∥ Si1-x Gex (001) [110] or Er (Si1-x Gex) 2-y (1 1- 00) [0001] ∥ Si1-x Gex (001) [1- 10]. Schottky barrier height, φBp, of the Er (Si1-x Gex) 2-y p- Si1-x Gex (100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, φBneff, from 0.33 to 0.37 eV.

AB - We studied erbium germanosilicide films formed on relaxed p-type Si1-x Gex (100) (x=0-0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500-700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er (Si1-x Gex) 2-y with orientation relationship Er (Si1-x Gex) 2-y (1 1- 00) - [0001] ∥ Si1-x Gex (001) [110] or Er (Si1-x Gex) 2-y (1 1- 00) [0001] ∥ Si1-x Gex (001) [1- 10]. Schottky barrier height, φBp, of the Er (Si1-x Gex) 2-y p- Si1-x Gex (100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, φBneff, from 0.33 to 0.37 eV.

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Materials and electrical characterization of Er (Si1-x Gex) 2-y films formed on Si1-x Gex (001) (x=0-0.3) via Rapid Thermal Annealing

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