Measurement and modeling of carbon nanotubes-based flip-chip RF device

C. Brun; C. C. Yap; Stéphane Bila; D. Baillargeat; B. K. Tay

doi:10.1109/MWSYM.2013.6697486

Measurement and modeling of carbon nanotubes-based flip-chip RF device

C. Brun, C. C. Yap, Stéphane Bila, D. Baillargeat, B. K. Tay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A flip chip device based on carbon nanotubes (CNTs) interconnections characterized up to 40 GHz is presented. An analytical model using an RLC transmission line is fitted from measurements of the fabricated structure. CNTs have the potential to make smaller interconnections than metal-based ones with the same degree of performance. A value of 324 kΩ is found for the contact resistance between CNTs. A CNT-bundle-based flip chip with -2.5 dB insertion loss and return loss below -13 dB is presented.

Original language	English
Title of host publication	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs	https://doi.org/10.1109/MWSYM.2013.6697486
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States Duration: Jun 2 2013 → Jun 7 2013

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/Territory	United States
City	Seattle, WA
Period	6/2/13 → 6/7/13

ASJC Scopus Subject Areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

CNT
Flip chip
Interconnections
Model
Transmission line

Access to Document

10.1109/MWSYM.2013.6697486

Cite this

@inproceedings{c429fac919e8423fa1854c932a74f33e,

title = "Measurement and modeling of carbon nanotubes-based flip-chip RF device",

abstract = "A flip chip device based on carbon nanotubes (CNTs) interconnections characterized up to 40 GHz is presented. An analytical model using an RLC transmission line is fitted from measurements of the fabricated structure. CNTs have the potential to make smaller interconnections than metal-based ones with the same degree of performance. A value of 324 kΩ is found for the contact resistance between CNTs. A CNT-bundle-based flip chip with -2.5 dB insertion loss and return loss below -13 dB is presented.",

keywords = "CNT, Flip chip, Interconnections, Model, Transmission line",

author = "C. Brun and Yap, {C. C.} and St{\'e}phane Bila and D. Baillargeat and Tay, {B. K.}",

year = "2013",

doi = "10.1109/MWSYM.2013.6697486",

language = "English",

isbn = "9781467361767",

series = "IEEE MTT-S International Microwave Symposium Digest",

booktitle = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013",

note = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 ; Conference date: 02-06-2013 Through 07-06-2013",

}

Brun, C, Yap, CC, Bila, S, Baillargeat, D & Tay, BK 2013, Measurement and modeling of carbon nanotubes-based flip-chip RF device. in 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013., 6697486, IEEE MTT-S International Microwave Symposium Digest, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, Seattle, WA, United States, 6/2/13. https://doi.org/10.1109/MWSYM.2013.6697486

TY - GEN

T1 - Measurement and modeling of carbon nanotubes-based flip-chip RF device

AU - Brun, C.

AU - Yap, C. C.

AU - Bila, Stéphane

AU - Baillargeat, D.

AU - Tay, B. K.

PY - 2013

Y1 - 2013

N2 - A flip chip device based on carbon nanotubes (CNTs) interconnections characterized up to 40 GHz is presented. An analytical model using an RLC transmission line is fitted from measurements of the fabricated structure. CNTs have the potential to make smaller interconnections than metal-based ones with the same degree of performance. A value of 324 kΩ is found for the contact resistance between CNTs. A CNT-bundle-based flip chip with -2.5 dB insertion loss and return loss below -13 dB is presented.

AB - A flip chip device based on carbon nanotubes (CNTs) interconnections characterized up to 40 GHz is presented. An analytical model using an RLC transmission line is fitted from measurements of the fabricated structure. CNTs have the potential to make smaller interconnections than metal-based ones with the same degree of performance. A value of 324 kΩ is found for the contact resistance between CNTs. A CNT-bundle-based flip chip with -2.5 dB insertion loss and return loss below -13 dB is presented.

KW - CNT

KW - Flip chip

KW - Interconnections

KW - Model

KW - Transmission line

UR - http://www.scopus.com/inward/record.url?scp=84893309956&partnerID=8YFLogxK

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U2 - 10.1109/MWSYM.2013.6697486

DO - 10.1109/MWSYM.2013.6697486

M3 - Conference contribution

AN - SCOPUS:84893309956

SN - 9781467361767

T3 - IEEE MTT-S International Microwave Symposium Digest

BT - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013

T2 - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013

Y2 - 2 June 2013 through 7 June 2013

ER -

Measurement and modeling of carbon nanotubes-based flip-chip RF device

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

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