Mechanically Durable Memristor Arrays Based on a Discrete Structure Design

Ting Wang, Zequn Cui, Yaqing Liu*, Dingjie Lu, Ming Wang, Changjin Wan, Wan Ru Leow, Changxian Wang, Liang Pan, Xun Cao, Yizhong Huang, Zhuangjian Liu, Alfred Iing Yoong Tok, Xiaodong Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Memristors constitute a promising functional component for information storage and in-memory computing in flexible and stretchable electronics including wearable devices, prosthetics, and soft robotics. Despite tremendous efforts made to adapt conventional rigid memristors to flexible and stretchable scenarios, stretchable and mechanical-damage-endurable memristors, which are critical for maintaining reliable functions under unexpected mechanical attack, have never been achieved. Here, the development of stretchable memristors with mechanical damage endurance based on a discrete structure design is reported. The memristors possess large stretchability (40%) and excellent deformability (half-fold), and retain stable performances under dynamic stretching and releasing. It is shown that the memristors maintain reliable functions and preserve information after extreme mechanical damage, including puncture (up to 100 times) and serious tearing situations (fully diagonally cut). The structural strategy offers new opportunities for next-generation stretchable memristors with mechanical damage endurance, which is vital to achieve reliable functions for flexible and stretchable electronics even in extreme and highly dynamic environments.

Original languageEnglish
Article number2106212
JournalAdvanced Materials
Volume34
Issue number4
DOIs
Publication statusPublished - Jan 27 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 Wiley-VCH GmbH

ASJC Scopus Subject Areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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