TY - JOUR
T1 - Mechanically Durable Memristor Arrays Based on a Discrete Structure Design
AU - Wang, Ting
AU - Cui, Zequn
AU - Liu, Yaqing
AU - Lu, Dingjie
AU - Wang, Ming
AU - Wan, Changjin
AU - Leow, Wan Ru
AU - Wang, Changxian
AU - Pan, Liang
AU - Cao, Xun
AU - Huang, Yizhong
AU - Liu, Zhuangjian
AU - Tok, Alfred Iing Yoong
AU - Chen, Xiaodong
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2022/1/27
Y1 - 2022/1/27
N2 - Memristors constitute a promising functional component for information storage and in-memory computing in flexible and stretchable electronics including wearable devices, prosthetics, and soft robotics. Despite tremendous efforts made to adapt conventional rigid memristors to flexible and stretchable scenarios, stretchable and mechanical-damage-endurable memristors, which are critical for maintaining reliable functions under unexpected mechanical attack, have never been achieved. Here, the development of stretchable memristors with mechanical damage endurance based on a discrete structure design is reported. The memristors possess large stretchability (40%) and excellent deformability (half-fold), and retain stable performances under dynamic stretching and releasing. It is shown that the memristors maintain reliable functions and preserve information after extreme mechanical damage, including puncture (up to 100 times) and serious tearing situations (fully diagonally cut). The structural strategy offers new opportunities for next-generation stretchable memristors with mechanical damage endurance, which is vital to achieve reliable functions for flexible and stretchable electronics even in extreme and highly dynamic environments.
AB - Memristors constitute a promising functional component for information storage and in-memory computing in flexible and stretchable electronics including wearable devices, prosthetics, and soft robotics. Despite tremendous efforts made to adapt conventional rigid memristors to flexible and stretchable scenarios, stretchable and mechanical-damage-endurable memristors, which are critical for maintaining reliable functions under unexpected mechanical attack, have never been achieved. Here, the development of stretchable memristors with mechanical damage endurance based on a discrete structure design is reported. The memristors possess large stretchability (40%) and excellent deformability (half-fold), and retain stable performances under dynamic stretching and releasing. It is shown that the memristors maintain reliable functions and preserve information after extreme mechanical damage, including puncture (up to 100 times) and serious tearing situations (fully diagonally cut). The structural strategy offers new opportunities for next-generation stretchable memristors with mechanical damage endurance, which is vital to achieve reliable functions for flexible and stretchable electronics even in extreme and highly dynamic environments.
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U2 - 10.1002/adma.202106212
DO - 10.1002/adma.202106212
M3 - Article
C2 - 34738253
AN - SCOPUS:85120579813
SN - 0935-9648
VL - 34
JO - Advanced Materials
JF - Advanced Materials
IS - 4
M1 - 2106212
ER -