Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

Peng Yu; Junhao Lin; Linfeng Sun; Quang Luan Le; Xuechao Yu; Guanhui Gao; Chuang Han Hsu; Di Wu; Tay Rong Chang; Qingsheng Zeng; Fucai Liu; Qi Jie Wang; Horng Tay Jeng; Hsin Lin; Achim Trampert; Zexiang Shen; Kazu Suenaga; Zheng Liu

doi:10.1002/adma.201603991

Metal–Semiconductor Phase-Transition in WSe_2(1-_x₎Te₂_x Monolayer

Peng Yu, Junhao Lin, Linfeng Sun, Quang Luan Le, Xuechao Yu, Guanhui Gao, Chuang Han Hsu, Di Wu, Tay Rong Chang, Qingsheng Zeng, Fucai Liu, Qi Jie Wang, Horng Tay Jeng, Hsin Lin, Achim Trampert, Zexiang Shen, Kazu Suenaga, Zheng Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

154 Citations (Scopus)

Original language	English
Article number	1603991
Journal	Advanced Materials
Volume	29
Issue number	4
DOIs	https://doi.org/10.1002/adma.201603991
Publication status	Published - Jan 2017
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

2D materials
band gap
field-effect transistor
metal
semiconductors

Access to Document

10.1002/adma.201603991

Cite this

@article{8bc90ecab5df447db7f0090640ab117a,

title = "Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer",

keywords = "2D materials, band gap, field-effect transistor, metal, semiconductors",

author = "Peng Yu and Junhao Lin and Linfeng Sun and Le, {Quang Luan} and Xuechao Yu and Guanhui Gao and Hsu, {Chuang Han} and Di Wu and Chang, {Tay Rong} and Qingsheng Zeng and Fucai Liu and Wang, {Qi Jie} and Jeng, {Horng Tay} and Hsin Lin and Achim Trampert and Zexiang Shen and Kazu Suenaga and Zheng Liu",

year = "2017",

month = jan,

doi = "10.1002/adma.201603991",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

AU - Yu, Peng

AU - Lin, Junhao

AU - Sun, Linfeng

AU - Le, Quang Luan

AU - Yu, Xuechao

AU - Gao, Guanhui

AU - Hsu, Chuang Han

AU - Wu, Di

AU - Chang, Tay Rong

AU - Zeng, Qingsheng

AU - Liu, Fucai

AU - Wang, Qi Jie

AU - Jeng, Horng Tay

AU - Lin, Hsin

AU - Trampert, Achim

AU - Shen, Zexiang

AU - Suenaga, Kazu

AU - Liu, Zheng

PY - 2017/1

Y1 - 2017/1

KW - 2D materials

KW - band gap

KW - field-effect transistor

KW - metal

KW - semiconductors

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U2 - 10.1002/adma.201603991

DO - 10.1002/adma.201603991

M3 - Article

C2 - 27874223

AN - SCOPUS:85005943944

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 4

M1 - 1603991