Micro-machined pyroelectric infrared detector based on sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films

Ling Ling Sun; Wei Guo Liu; Ooi Kiang Tan; Wei Guang Zhu

Micro-machined pyroelectric infrared detector based on sol-gel derived Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃ multilayer thin films

Ling Ling Sun^*, Wei Guo Liu, Ooi Kiang Tan, Wei Guang Zhu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A sol-gel derived Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃ (PZT/PT) multilayer thin film structure has been studied for the application of infrared detection. Compared to the pure Pb(Zr_0.3Ti_0.7)O₃ (PZT) thin film deposited by the same process, the multilayer thin film shows a lower dielectric constant and similar pyroelectric coefficient and dielectric loss. The detectivity figures of merit for the PZT/PT and PT thin films are 20.3 × 10^-6 Pa-1/2 and 18.7 × 10^-6Pa^-1/2, and values of voltage response figures of merit are 0.038 m²/C and 0.028 m²/C, respectively. The results show that the multilayer PZT/PT film is a better choice for pyroelectric infrared detection. Pyroelectric infrared detectors have been successfully developed based on the multilayer PZT/PT thin film. A silicon bulk-machined thermal isolation structure has been applied to reduce thermal loss from the sensing thin film to the Si substrate. To evaluate the detector performance and to aid in the thermal structure design, finite element analysis (FEA) of the detector in terms of heat transfer has been carried out by using a software package "ANSYS". The detector response has been characterized by a modified Chynoweth system. At 7 Hz, the dynamic pyroelectric voltage responsivity is measured to be 108 V/W (in rms) with the sensing element size of 240 × 360 μm². The measured results are consistent with the simulated results.

Original language	English
Pages (from-to)	357-362
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	688
Publication status	Published - 2002
Externally published	Yes
Event	Ferroelectric Thin Films X - Boston, MA, United States Duration: Nov 25 2001 → Nov 29 2001

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{74056f0bc1db4ac0bcb68b1cc702a74b,

title = "Micro-machined pyroelectric infrared detector based on sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films",

abstract = "A sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer thin film structure has been studied for the application of infrared detection. Compared to the pure Pb(Zr0.3Ti0.7)O3 (PZT) thin film deposited by the same process, the multilayer thin film shows a lower dielectric constant and similar pyroelectric coefficient and dielectric loss. The detectivity figures of merit for the PZT/PT and PT thin films are 20.3 × 10-6 Pa-1/2 and 18.7 × 10-6Pa-1/2, and values of voltage response figures of merit are 0.038 m2/C and 0.028 m2/C, respectively. The results show that the multilayer PZT/PT film is a better choice for pyroelectric infrared detection. Pyroelectric infrared detectors have been successfully developed based on the multilayer PZT/PT thin film. A silicon bulk-machined thermal isolation structure has been applied to reduce thermal loss from the sensing thin film to the Si substrate. To evaluate the detector performance and to aid in the thermal structure design, finite element analysis (FEA) of the detector in terms of heat transfer has been carried out by using a software package {"}ANSYS{"}. The detector response has been characterized by a modified Chynoweth system. At 7 Hz, the dynamic pyroelectric voltage responsivity is measured to be 108 V/W (in rms) with the sensing element size of 240 × 360 μm2. The measured results are consistent with the simulated results.",

author = "Sun, {Ling Ling} and Liu, {Wei Guo} and Tan, {Ooi Kiang} and Zhu, {Wei Guang}",

year = "2002",

language = "English",

volume = "688",

pages = "357--362",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films X ; Conference date: 25-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Micro-machined pyroelectric infrared detector based on sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films

AU - Sun, Ling Ling

AU - Liu, Wei Guo

AU - Tan, Ooi Kiang

AU - Zhu, Wei Guang

PY - 2002

Y1 - 2002

N2 - A sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer thin film structure has been studied for the application of infrared detection. Compared to the pure Pb(Zr0.3Ti0.7)O3 (PZT) thin film deposited by the same process, the multilayer thin film shows a lower dielectric constant and similar pyroelectric coefficient and dielectric loss. The detectivity figures of merit for the PZT/PT and PT thin films are 20.3 × 10-6 Pa-1/2 and 18.7 × 10-6Pa-1/2, and values of voltage response figures of merit are 0.038 m2/C and 0.028 m2/C, respectively. The results show that the multilayer PZT/PT film is a better choice for pyroelectric infrared detection. Pyroelectric infrared detectors have been successfully developed based on the multilayer PZT/PT thin film. A silicon bulk-machined thermal isolation structure has been applied to reduce thermal loss from the sensing thin film to the Si substrate. To evaluate the detector performance and to aid in the thermal structure design, finite element analysis (FEA) of the detector in terms of heat transfer has been carried out by using a software package "ANSYS". The detector response has been characterized by a modified Chynoweth system. At 7 Hz, the dynamic pyroelectric voltage responsivity is measured to be 108 V/W (in rms) with the sensing element size of 240 × 360 μm2. The measured results are consistent with the simulated results.

AB - A sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer thin film structure has been studied for the application of infrared detection. Compared to the pure Pb(Zr0.3Ti0.7)O3 (PZT) thin film deposited by the same process, the multilayer thin film shows a lower dielectric constant and similar pyroelectric coefficient and dielectric loss. The detectivity figures of merit for the PZT/PT and PT thin films are 20.3 × 10-6 Pa-1/2 and 18.7 × 10-6Pa-1/2, and values of voltage response figures of merit are 0.038 m2/C and 0.028 m2/C, respectively. The results show that the multilayer PZT/PT film is a better choice for pyroelectric infrared detection. Pyroelectric infrared detectors have been successfully developed based on the multilayer PZT/PT thin film. A silicon bulk-machined thermal isolation structure has been applied to reduce thermal loss from the sensing thin film to the Si substrate. To evaluate the detector performance and to aid in the thermal structure design, finite element analysis (FEA) of the detector in terms of heat transfer has been carried out by using a software package "ANSYS". The detector response has been characterized by a modified Chynoweth system. At 7 Hz, the dynamic pyroelectric voltage responsivity is measured to be 108 V/W (in rms) with the sensing element size of 240 × 360 μm2. The measured results are consistent with the simulated results.

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M3 - Conference article

AN - SCOPUS:0036352275

SN - 0272-9172

VL - 688

SP - 357

EP - 362

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films X

Y2 - 25 November 2001 through 29 November 2001

ER -

Micro-machined pyroelectric infrared detector based on sol-gel derived Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃ multilayer thin films

Abstract

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