Abstract
The formation of Ni silicides has been successfully monitored by Raman spectroscopy. Ni silicides formed at different annealing temperatures using rapid thermal annealing were analyzed using Rutherford backscattering spectroscopy and X-ray diffraction. Raman spectroscopy was further used to examine these samples. The results showed that Raman spectroscopy could accurately identify the phases of Ni silicides formed at various temperatures. These findings were used to demonstrate the increased thermal stability of NiSi by the addition of Pt. This study demonstrates the applicability of Raman spectroscopy for monitoring the formation of NiSi, which was suggested to be the future silicide for deep submicrometer integrated circuit processing. Raman spectroscopy offers a unique tool for phase identification at localized areas and mapping characterization of Ni silicides with micrometer spatial resolution.
| Original language | English |
|---|---|
| Pages (from-to) | 153-155 |
| Number of pages | 3 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2000 |
| Externally published | Yes |
ASJC Scopus Subject Areas
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering