TY - GEN
T1 - Microstructure and electrical properties of in-situ annealed carbon films
AU - Shakerzadeh, Maziar
AU - Tay, Beng Kang
AU - Teo, Hang Tong Edwin
AU - Tan, Chong Wei
PY - 2010
Y1 - 2010
N2 - The microstructure and electrical properties of in-situ annealed carbon films is studied in this paper. The structure of the films is studied by transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The microstructure of the films strongly depends on the deposition temperature for the films deposited at high temperatures (higher than 400° C). However, at low temperatures, the substrate bias is the other crucial factor which governs the microstructure of the film. Electrical conductivity of the film strongly depends on the formation of preferred orientation in the microstructure of the films.
AB - The microstructure and electrical properties of in-situ annealed carbon films is studied in this paper. The structure of the films is studied by transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The microstructure of the films strongly depends on the deposition temperature for the films deposited at high temperatures (higher than 400° C). However, at low temperatures, the substrate bias is the other crucial factor which governs the microstructure of the film. Electrical conductivity of the film strongly depends on the formation of preferred orientation in the microstructure of the films.
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U2 - 10.1109/INEC.2010.5424651
DO - 10.1109/INEC.2010.5424651
M3 - Conference contribution
AN - SCOPUS:77951662451
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 230
EP - 231
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -