Microstructure and electrical properties of in-situ annealed carbon films

Maziar Shakerzadeh*, Beng Kang Tay, Hang Tong Edwin Teo, Chong Wei Tan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The microstructure and electrical properties of in-situ annealed carbon films is studied in this paper. The structure of the films is studied by transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The microstructure of the films strongly depends on the deposition temperature for the films deposited at high temperatures (higher than 400° C). However, at low temperatures, the substrate bias is the other crucial factor which governs the microstructure of the film. Electrical conductivity of the film strongly depends on the formation of preferred orientation in the microstructure of the films.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages230-231
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
Country/TerritoryChina
CityHongkong
Period1/3/101/8/10

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Microstructure and electrical properties of in-situ annealed carbon films'. Together they form a unique fingerprint.

Cite this