Microstructure and electrical properties of Nb2O5 doped titanium dioxide

Xiangyi Fang; J. T. Oh

doi:10.1016/j.mseb.2006.06.032

Microstructure and electrical properties of Nb₂O₅ doped titanium dioxide

Xiangyi Fang^*, J. T. Oh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The present work attempts to investigate the sintering characteristics, grain boundary morphology and electric conductivity of Nb₂O₅ doped TiO₂ semiconductor ceramics. X-ray diffraction results showed evidence of a second phase beside the rutile TiO₂ when Nb₂O₅ exceeds 0.7 mol%. SEM images showed that Nb₂O₅ doping can lowers the sintering temperature of TiO₂, although not significantly. Lattice images of the grain boundary morphology obtained by high resolution transmission electron microscopy revealed defects introduced from the doping. Grain boundaries vary from amorphous to a faceted structure. Finally, electrical conductivity measurements showed that the grain boundary resistance is greatly reduced at high temperature.

Original language	English
Pages (from-to)	15-19
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	136
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2006.06.032
Publication status	Published - Jan 15 2007
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Ceramics
Electrical properties
Electron microscopy
Electronic materials

Access to Document

10.1016/j.mseb.2006.06.032

Cite this

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abstract = "The present work attempts to investigate the sintering characteristics, grain boundary morphology and electric conductivity of Nb2O5 doped TiO2 semiconductor ceramics. X-ray diffraction results showed evidence of a second phase beside the rutile TiO2 when Nb2O5 exceeds 0.7 mol%. SEM images showed that Nb2O5 doping can lowers the sintering temperature of TiO2, although not significantly. Lattice images of the grain boundary morphology obtained by high resolution transmission electron microscopy revealed defects introduced from the doping. Grain boundaries vary from amorphous to a faceted structure. Finally, electrical conductivity measurements showed that the grain boundary resistance is greatly reduced at high temperature.",

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AU - Oh, J. T.

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AB - The present work attempts to investigate the sintering characteristics, grain boundary morphology and electric conductivity of Nb2O5 doped TiO2 semiconductor ceramics. X-ray diffraction results showed evidence of a second phase beside the rutile TiO2 when Nb2O5 exceeds 0.7 mol%. SEM images showed that Nb2O5 doping can lowers the sintering temperature of TiO2, although not significantly. Lattice images of the grain boundary morphology obtained by high resolution transmission electron microscopy revealed defects introduced from the doping. Grain boundaries vary from amorphous to a faceted structure. Finally, electrical conductivity measurements showed that the grain boundary resistance is greatly reduced at high temperature.

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KW - Electron microscopy

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