Microstructure dependence on processing temperature in sol-gel derived thin ferroelectric films of LiNbO3 on SiO2/Si substrate

S. D. Cheng*, C. H. Kam, Y. Zhou, Y. L. Lam, Y. C. Chan, Z. Sun, W. S. Gan, K. Pita

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

In this paper, we report our sol-gel derived thin films of LiNbO3 on silica-on-silicon, a potential substrate for integrated optics. The dependence of the microstructure of these films on the processing temperature is presented. The films are studied by means of X-ray diffraction, atomic force microscopy, Raman spectroscopy, and variable angle spectroscopic ellipsometry. We find that the smoothness of the films can be improved by continuously annealing the films in several steps. The experimental results show that the 500°C annealed films have a nanocrystalline nature with the grain size ranging from 39nm to 109nm. The ultrafine crystalline structure and the pure trigonal phase of the film material make it suitable for E-O and A-O waveguide applications.

Original languageEnglish
Pages (from-to)805/217 - 810/222
JournalFerroelectrics
Volume231
Issue number1 -4 pt 3
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) - Singapore, Singapore
Duration: Dec 7 1998Dec 11 1998

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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