Microwave surface transport in narrow-bandgap PdSe2-MOSFETs

R. Le Goff; M. Rosticher; Y. Peng; Z. Liu; T. Taniguchi; K. Watanabe; J. M. Berroir; E. Bocquillon; G. Fève; C. Voisin; J. Chazelas; B. Plaçais; E. Baudin

doi:10.1088/2053-1583/abfe9f

Microwave surface transport in narrow-bandgap PdSe₂-MOSFETs

R. Le Goff^*, M. Rosticher, Y. Peng, Z. Liu, T. Taniguchi, K. Watanabe, J. M. Berroir, E. Bocquillon, G. Fève, C. Voisin, J. Chazelas, B. Plaçais^*, E. Baudin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Group-10 transition-metal dichalcogenides are puckered van der Waals semiconductors, with a narrow bandgap, envisioned for ultra-broadband infrared (IR) detection. To assess their dynamical transport properties we investigate PdSe₂ n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of 15 nm, a mobility of 110 cm² V⁻¹ s⁻¹, and a bulk bandgap of 0.15 eV. Our 10 µm long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III–V (InAs) and II–VI (HgCdTe) devices. The integration of bulk absorption and surface readout in PdSe₂-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1–10 µm range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.

Original language	English
Article number	035035
Journal	2D Materials
Volume	8
Issue number	3
DOIs	https://doi.org/10.1088/2053-1583/abfe9f
Publication status	Published - Jul 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 The Author(s). Published by IOP Publishing Ltd

ASJC Scopus Subject Areas

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Microwave
MOSFET
PdSe2
Photodetection
Transistor

Access to Document

10.1088/2053-1583/abfe9f

Cite this

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title = "Microwave surface transport in narrow-bandgap PdSe2-MOSFETs",

abstract = "Group-10 transition-metal dichalcogenides are puckered van der Waals semiconductors, with a narrow bandgap, envisioned for ultra-broadband infrared (IR) detection. To assess their dynamical transport properties we investigate PdSe2 n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of 15 nm, a mobility of 110 cm2 V−1 s−1, and a bulk bandgap of 0.15 eV. Our 10 µm long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III–V (InAs) and II–VI (HgCdTe) devices. The integration of bulk absorption and surface readout in PdSe2-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1–10 µm range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.",

keywords = "Microwave, MOSFET, PdSe2, Photodetection, Transistor",

author = "{Le Goff}, R. and M. Rosticher and Y. Peng and Z. Liu and T. Taniguchi and K. Watanabe and Berroir, {J. M.} and E. Bocquillon and G. F{\`e}ve and C. Voisin and J. Chazelas and B. Pla{\c c}ais and E. Baudin",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s). Published by IOP Publishing Ltd",

year = "2021",

month = jul,

doi = "10.1088/2053-1583/abfe9f",

language = "English",

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T1 - Microwave surface transport in narrow-bandgap PdSe2-MOSFETs

AU - Le Goff, R.

AU - Rosticher, M.

AU - Peng, Y.

AU - Liu, Z.

AU - Taniguchi, T.

AU - Watanabe, K.

AU - Berroir, J. M.

AU - Bocquillon, E.

AU - Fève, G.

AU - Voisin, C.

AU - Chazelas, J.

AU - Plaçais, B.

AU - Baudin, E.

PY - 2021/7

Y1 - 2021/7

N2 - Group-10 transition-metal dichalcogenides are puckered van der Waals semiconductors, with a narrow bandgap, envisioned for ultra-broadband infrared (IR) detection. To assess their dynamical transport properties we investigate PdSe2 n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of 15 nm, a mobility of 110 cm2 V−1 s−1, and a bulk bandgap of 0.15 eV. Our 10 µm long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III–V (InAs) and II–VI (HgCdTe) devices. The integration of bulk absorption and surface readout in PdSe2-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1–10 µm range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.

AB - Group-10 transition-metal dichalcogenides are puckered van der Waals semiconductors, with a narrow bandgap, envisioned for ultra-broadband infrared (IR) detection. To assess their dynamical transport properties we investigate PdSe2 n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of 15 nm, a mobility of 110 cm2 V−1 s−1, and a bulk bandgap of 0.15 eV. Our 10 µm long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III–V (InAs) and II–VI (HgCdTe) devices. The integration of bulk absorption and surface readout in PdSe2-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1–10 µm range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.

KW - Microwave

KW - MOSFET

KW - PdSe2

KW - Photodetection

KW - Transistor

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