Abstract
Metal to metal bonding, particularly Cu-Cu bonding, is an important process step of three-dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this article, the mentioned phenomenon is modeled and simulated. Electromigration-induced contact resistance reduction of bonded interconnects may provide a method for postbonding bond property improvement for 3DICs.
| Original language | English |
|---|---|
| Pages (from-to) | H405-H409 |
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 |
| Externally published | Yes |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
