Modification of tetrahedral amorphous carbon film by concurrent Ar ion bombardment during deposition

L. K. Cheah, X. Shi, B. K. Tay, E. Liu

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

The surface morphology, mechanical and optical properties of tetrahedral amorphous carbon (ta-C) films by concurrent Ar ion bombardment during filtered cathodic vacuum arc (FCVA) deposition are investigated. The Ar ions were produced by an RF ion beam source at different ion energies ranging from 60 eV to 500 eV, in order to study the Ar ion-induced modification of ta-C films. Atomic force microscopy shows that all films are atomically smooth, with roughnesses (RMS) ranging from 0.17 to 0.43 nm. A rougher film surface has been attributed to a higher Ar ion energy. The compressive stress in the ta-C films ranges from 6.6 to 11.2 GPa and the microhardness from 34 to 67 GPa. A lower compressive stress and microhardness were observed at a higher Ar ion energy. The optical absorption spectrum shows that the edge has shifted to the lower photon energy side with the increasing Ar ion energy. The optical band gap decreases from 2.61 to 1.52 eV as the Ar ion energy is increased from 60 eV to 500 eV. The compressive stress, microhardness, optical absorption and optical band gap information suggests that the sp2-bonded carbon atoms in the sp3 matrix increase with the increasing Ar ion energy.

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalSurface and Coatings Technology
Volume105
Issue number1-2
DOIs
Publication statusPublished - Jun 5 1998

ASJC Scopus Subject Areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Keywords

  • Amorphous carbon ion bombardment
  • Filtered cathodic vacuum arc

Fingerprint

Dive into the research topics of 'Modification of tetrahedral amorphous carbon film by concurrent Ar ion bombardment during deposition'. Together they form a unique fingerprint.

Cite this