Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy

E. H. Lim; G. Karunasiri; S. J. Chua; H. Wong; K. L. Pey; K. H. Lee

doi:10.1109/55.669738

Monitoring of TiSi ₂ formation on narrow polycrystalline silicon lines using raman spectroscopy

E. H. Lim^*, G. Karunasiri, S. J. Chua, H. Wong, K. L. Pey, K. H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi ₂) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi ₂ phases were clearly observed. Results demonstrate that analysis of the C54-TiSi ₂ Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi ₂ formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi ₂ formation.

Original language	English
Pages (from-to)	171-173
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	5
DOIs	https://doi.org/10.1109/55.669738
Publication status	Published - May 1998
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{7230f0b49d3d4c66bb4757e8e8c3c8b6,

title = "Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy",

abstract = "Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.",

author = "Lim, {E. H.} and G. Karunasiri and Chua, {S. J.} and H. Wong and Pey, {K. L.} and Lee, {K. H.}",

year = "1998",

month = may,

doi = "10.1109/55.669738",

language = "English",

volume = "19",

pages = "171--173",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy

AU - Lim, E. H.

AU - Karunasiri, G.

AU - Chua, S. J.

AU - Wong, H.

AU - Pey, K. L.

AU - Lee, K. H.

PY - 1998/5

Y1 - 1998/5

N2 - Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.

AB - Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.

UR - http://www.scopus.com/inward/record.url?scp=0032070493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032070493&partnerID=8YFLogxK

U2 - 10.1109/55.669738

DO - 10.1109/55.669738

M3 - Article

AN - SCOPUS:0032070493

SN - 0741-3106

VL - 19

SP - 171

EP - 173

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Monitoring of TiSi ₂ formation on narrow polycrystalline silicon lines using raman spectroscopy

Abstract

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