Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices

Muhammad Aamir Hassan; Mohammad Mujahid; Lydia Helena Wong

doi:10.4028/www.scientific.net/MSF.864.143

Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices

Muhammad Aamir Hassan^*, Mohammad Mujahid, Lydia Helena Wong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu(In,Ga)(S,Se)₂ thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl₃), copper (indium chloride; CuCl₂), indium (indium chloride; InCl₃), and Sulphur (thiourea; (SC(NH₂)₂) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu(In,Ga)(S,Se)₂ (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.

Original language	English
Title of host publication	4th International Conference on Nano and Materials Engineering, 2016
Editors	Tjokorda Gde Tirta Nindhia, Hendra Suherman, Brian Yuliarto, Brian Yuliarto
Publisher	Trans Tech Publications Ltd
Pages	143-148
Number of pages	6
ISBN (Print)	9783038357254
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.864.143
Publication status	Published - 2016
Externally published	Yes
Event	4th International Conference on Nano and Materials Engineering, ICNME 2016 - Bali Island, Indonesia Duration: Apr 7 2016 → Apr 8 2016

Publication series

Name	Materials Science Forum
Volume	864
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	4th International Conference on Nano and Materials Engineering, ICNME 2016
Country/Territory	Indonesia
City	Bali Island
Period	4/7/16 → 4/8/16

Bibliographical note

Publisher Copyright:
© 2016 Trans Tech Publications, Switzerland.

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

CIGSSe
Multi band gap
Selenization and solar cell
Spray pyrolysis

Access to Document

10.4028/www.scientific.net/MSF.864.143

Cite this

Hassan, M. A., Mujahid, M., & Wong, L. H. (2016). Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices. In T. G. T. Nindhia, H. Suherman, B. Yuliarto, & B. Yuliarto (Eds.), 4th International Conference on Nano and Materials Engineering, 2016 (pp. 143-148). (Materials Science Forum; Vol. 864). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.864.143

Hassan, Muhammad Aamir ; Mujahid, Mohammad ; Wong, Lydia Helena. / Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices. 4th International Conference on Nano and Materials Engineering, 2016. editor / Tjokorda Gde Tirta Nindhia ; Hendra Suherman ; Brian Yuliarto ; Brian Yuliarto. Trans Tech Publications Ltd, 2016. pp. 143-148 (Materials Science Forum).

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title = "Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices",

abstract = "The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu(In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu(In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.",

keywords = "CIGSSe, Multi band gap, Selenization and solar cell, Spray pyrolysis",

author = "Hassan, {Muhammad Aamir} and Mohammad Mujahid and Wong, {Lydia Helena}",

note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 4th International Conference on Nano and Materials Engineering, ICNME 2016 ; Conference date: 07-04-2016 Through 08-04-2016",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.864.143",

language = "English",

isbn = "9783038357254",

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Hassan, MA, Mujahid, M & Wong, LH 2016, Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices. in TGT Nindhia, H Suherman, B Yuliarto & B Yuliarto (eds), 4th International Conference on Nano and Materials Engineering, 2016. Materials Science Forum, vol. 864, Trans Tech Publications Ltd, pp. 143-148, 4th International Conference on Nano and Materials Engineering, ICNME 2016, Bali Island, Indonesia, 4/7/16. https://doi.org/10.4028/www.scientific.net/MSF.864.143

Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices. / Hassan, Muhammad Aamir; Mujahid, Mohammad; Wong, Lydia Helena.
4th International Conference on Nano and Materials Engineering, 2016. ed. / Tjokorda Gde Tirta Nindhia; Hendra Suherman; Brian Yuliarto; Brian Yuliarto. Trans Tech Publications Ltd, 2016. p. 143-148 (Materials Science Forum; Vol. 864).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices

AU - Hassan, Muhammad Aamir

AU - Mujahid, Mohammad

AU - Wong, Lydia Helena

PY - 2016

Y1 - 2016

N2 - The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu(In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu(In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.

AB - The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu(In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu(In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.

KW - CIGSSe

KW - Multi band gap

KW - Selenization and solar cell

KW - Spray pyrolysis

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DO - 10.4028/www.scientific.net/MSF.864.143

M3 - Conference contribution

AN - SCOPUS:85023606737

SN - 9783038357254

T3 - Materials Science Forum

SP - 143

EP - 148

BT - 4th International Conference on Nano and Materials Engineering, 2016

A2 - Nindhia, Tjokorda Gde Tirta

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A2 - Yuliarto, Brian

PB - Trans Tech Publications Ltd

T2 - 4th International Conference on Nano and Materials Engineering, ICNME 2016

Y2 - 7 April 2016 through 8 April 2016

ER -

Hassan MA, Mujahid M, Wong LH. Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices. In Nindhia TGT, Suherman H, Yuliarto B, Yuliarto B, editors, 4th International Conference on Nano and Materials Engineering, 2016. Trans Tech Publications Ltd. 2016. p. 143-148. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.864.143

Multi band gap Cu (In,Ga) (S,Se)2 thin films deposited by spray pyrolysis for high performance solar cell devices

Abstract

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Bibliographical note

ASJC Scopus Subject Areas

Keywords

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