Abstract
Through substrate vias (TSVs) are a seminal component of three-dimensional (3-D) integrated circuits (ICs). Each TSV typically carries a single signal between two adjacent layers of a 3-D structure. A multi-bit carbon nanotube TSV is proposed in this paper to increase the number of I/Os among layers within 3-D ICs. The proposed multi-bit TSV can propagate multiple independent signals due to the high anisotropy of the carbon nanotubes. The electrical properties of each bit within a two-bit TSV and the electrical interactions between the bits are compared to a theory-based electrical model, exhibiting high accuracy. The passive elements deviate by up to 4%, and the S-parameters of the system deviate by up to 1.5% from numerical analysis. Capacitive coupling and leakage current between the bits of the two-bit TSV model have also been evaluated. The structure exhibits negligible noise coupling (less than 1%) and a peak leakage current of 631.7 µA.
| Original language | English |
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| Title of host publication | 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781728133201 |
| Publication status | Published - 2020 |
| Externally published | Yes |
| Event | 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online Duration: Oct 10 2020 → Oct 21 2020 |
Publication series
| Name | Proceedings - IEEE International Symposium on Circuits and Systems |
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| Volume | 2020-October |
| ISSN (Print) | 0271-4310 |
Conference
| Conference | 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 |
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| City | Virtual, Online |
| Period | 10/10/20 → 10/21/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
Keywords
- 3-D IC
- Carbon nanotube
- Interconnent
- Through substrate via