Abstract
This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.
Original language | English |
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Article number | 016502 |
Journal | Applied Physics Express |
Volume | 18 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1 2025 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.
ASJC Scopus Subject Areas
- General Engineering
- General Physics and Astronomy
Keywords
- 2DEG
- AlN/GaN
- GaN Schottky Barrier Diodes
- multi-channel