Multi-channel AlN/GaN Schottky barrier diodes

Hanchao Li; Yue Wang; Qingyun Xie; Hanlin Xie; Hui Teng Tan; Pradip Dalapati; Siyu Liu; Kumud Ranjan; Siewchuen Foo; Subramaniam Arulkumaran; Chee Lip Gan; Geok Ing Ng

doi:10.35848/1882-0786/ada2d8

Multi-channel AlN/GaN Schottky barrier diodes

Hanchao Li^*, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R_sh (69 Ω/□), thanks to a high N s of 6.7 × 10¹³ cm⁻². The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm⁻¹. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

Original language	English
Article number	016502
Journal	Applied Physics Express
Volume	18
Issue number	1
DOIs	https://doi.org/10.35848/1882-0786/ada2d8
Publication status	Published - Jan 1 2025
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

ASJC Scopus Subject Areas

General Engineering
General Physics and Astronomy

Keywords

2DEG
AlN/GaN
GaN Schottky Barrier Diodes
multi-channel

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10.35848/1882-0786/ada2d8

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title = "Multi-channel AlN/GaN Schottky barrier diodes",

abstract = "This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.",

keywords = "2DEG, AlN/GaN, GaN Schottky Barrier Diodes, multi-channel",

author = "Hanchao Li and Yue Wang and Qingyun Xie and Hanlin Xie and Tan, {Hui Teng} and Pradip Dalapati and Siyu Liu and Kumud Ranjan and Siewchuen Foo and Subramaniam Arulkumaran and Gan, {Chee Lip} and Ng, {Geok Ing}",

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doi = "10.35848/1882-0786/ada2d8",

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AU - Li, Hanchao

AU - Wang, Yue

AU - Xie, Qingyun

AU - Xie, Hanlin

AU - Tan, Hui Teng

AU - Dalapati, Pradip

AU - Liu, Siyu

AU - Ranjan, Kumud

AU - Foo, Siewchuen

AU - Arulkumaran, Subramaniam

AU - Gan, Chee Lip

AU - Ng, Geok Ing

PY - 2025/1/1

Y1 - 2025/1/1

N2 - This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

AB - This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

KW - 2DEG

KW - AlN/GaN

KW - GaN Schottky Barrier Diodes

KW - multi-channel

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 1

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ER -

Multi-channel AlN/GaN Schottky barrier diodes

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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