Multi-channel AlN/GaN Schottky barrier diodes

Hanchao Li*, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Ω/□), thanks to a high N s of 6.7 × 1013 cm−2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm−1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

Original languageEnglish
Article number016502
JournalApplied Physics Express
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 1 2025
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

ASJC Scopus Subject Areas

  • General Engineering
  • General Physics and Astronomy

Keywords

  • 2DEG
  • AlN/GaN
  • GaN Schottky Barrier Diodes
  • multi-channel

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