@inproceedings{c58d391b00ba41918609cdecee1ee015,
title = "Nanostructured materials for sensing and imaging",
abstract = "From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the narrow bandgap InSb materials makes it possible for wide band infrared absorption covering mid and long wavelength infrared range. With the nanostructured materials made of metal and dielectric composites, visible light can be manipulated, which has potential application for super resolution imaging beyond diffraction limit.",
keywords = "Imaging, Infrared photodetector, Nanostructure, Sensing",
author = "Zhang, {D. H.} and Yan, {C. C.} and Chen, {X. Z.} and Jin, {Y. J.} and Li, {D. D.} and Bian, {H. J.} and Xu, {Z. J.} and Wang, {Y. K.}",
year = "2010",
doi = "10.1109/AOM.2010.5713576",
language = "English",
isbn = "9781424483938",
series = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",
booktitle = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",
note = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 ; Conference date: 03-12-2010 Through 06-12-2010",
}