New salicidation technology with Ni(Pt) alloy for MOSFETs

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; D. Z. Chi; L. Chan

doi:10.1109/55.974579

New salicidation technology with Ni(Pt) alloy for MOSFETs

P. S. Lee^*, K. L. Pey, D. Mangelinck, J. Ding, D. Z. Chi, L. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

102 Citations (Scopus)

Abstract

A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi ₂ and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.

Original language	English
Pages (from-to)	568-570
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	12
DOIs	https://doi.org/10.1109/55.974579
Publication status	Published - Dec 2001
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Ni(Pt)Si
NiSi
Salicidation

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10.1109/55.974579

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title = "New salicidation technology with Ni(Pt) alloy for MOSFETs",

abstract = "A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi 2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.",

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T1 - New salicidation technology with Ni(Pt) alloy for MOSFETs

AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Chi, D. Z.

AU - Chan, L.

PY - 2001/12

Y1 - 2001/12

N2 - A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi 2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.

AB - A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) window by delaying the nucleation of NiSi 2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.

KW - Ni(Pt)Si

KW - NiSi

KW - Salicidation

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

New salicidation technology with Ni(Pt) alloy for MOSFETs

Abstract

ASJC Scopus Subject Areas

Keywords

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