Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+ implantation

P. S. Lee; D. Mangelinck; K. L. Pey; J. Ding; D. Z. Chi; J. Y. Dai; A. See

doi:10.1007/s11664-001-0173-1

Nickel silicide formation on Si(100) and poly-Si with a presilicide N₂⁺ implantation

P. S. Lee^*, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, J. Y. Dai, A. See

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The key feature of this study is to incorporate N₂⁺ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N₂⁺ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

Original language	English
Pages (from-to)	1554-1559
Number of pages	6
Journal	Journal of Electronic Materials
Volume	30
Issue number	12
DOIs	https://doi.org/10.1007/s11664-001-0173-1
Publication status	Published - Dec 2001
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Agglomeration
Layer inversion
N Implant
NiSi
Phase stability

Access to Document

10.1007/s11664-001-0173-1

Cite this

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title = "Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+ implantation",

abstract = "The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.",

keywords = "Agglomeration, Layer inversion, N Implant, NiSi, Phase stability",

author = "Lee, {P. S.} and D. Mangelinck and Pey, {K. L.} and J. Ding and Chi, {D. Z.} and Dai, {J. Y.} and A. See",

year = "2001",

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T1 - Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+ implantation

AU - Lee, P. S.

AU - Mangelinck, D.

AU - Pey, K. L.

AU - Ding, J.

AU - Chi, D. Z.

AU - Dai, J. Y.

AU - See, A.

PY - 2001/12

Y1 - 2001/12

N2 - The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

AB - The key feature of this study is to incorporate N2+ implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+ implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

KW - Agglomeration

KW - Layer inversion

KW - N Implant

KW - NiSi

KW - Phase stability

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