Nickel silicide formation using multiple-pulsed laser annealing

Y. Setiawan; P. S. Lee; K. L. Pey; X. C. Wang; G. C. Lim; F. L. Chow

doi:10.1063/1.2433707

Nickel silicide formation using multiple-pulsed laser annealing

Y. Setiawan^*, P. S. Lee, K. L. Pey, X. C. Wang, G. C. Lim, F. L. Chow

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni (Ti) Si system was studied. A layered structure consisting of both crystalline Ni Si2 and Ni-rich Ni-Si amorphous phases with a protective Ti Ox overlayer was formed after five-pulsed laser annealing at 0.4 J cm-2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm-2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

Original language	English
Article number	034307
Journal	Journal of Applied Physics
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.2433707
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

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title = "Nickel silicide formation using multiple-pulsed laser annealing",

abstract = "The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni (Ti) Si system was studied. A layered structure consisting of both crystalline Ni Si2 and Ni-rich Ni-Si amorphous phases with a protective Ti Ox overlayer was formed after five-pulsed laser annealing at 0.4 J cm-2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm-2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.",

author = "Y. Setiawan and Lee, {P. S.} and Pey, {K. L.} and Wang, {X. C.} and Lim, {G. C.} and Chow, {F. L.}",

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T1 - Nickel silicide formation using multiple-pulsed laser annealing

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Pey, K. L.

AU - Wang, X. C.

AU - Lim, G. C.

AU - Chow, F. L.

PY - 2007

Y1 - 2007

N2 - The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni (Ti) Si system was studied. A layered structure consisting of both crystalline Ni Si2 and Ni-rich Ni-Si amorphous phases with a protective Ti Ox overlayer was formed after five-pulsed laser annealing at 0.4 J cm-2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm-2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

AB - The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni (Ti) Si system was studied. A layered structure consisting of both crystalline Ni Si2 and Ni-rich Ni-Si amorphous phases with a protective Ti Ox overlayer was formed after five-pulsed laser annealing at 0.4 J cm-2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm-2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

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Nickel silicide formation using multiple-pulsed laser annealing

Abstract

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