Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

Guifang Han; Wen Han Du; Bao Li An; Annalisa Bruno; Shin Woei Leow; Cesare Soci; Sam Zhang; Subodh G. Mhaisalkar; Nripan Mathews

doi:10.1016/j.scriptamat.2018.04.049

Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

Guifang Han, Wen Han Du, Bao Li An, Annalisa Bruno, Shin Woei Leow, Cesare Soci, Sam Zhang, Subodh G. Mhaisalkar, Nripan Mathews^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu₂O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu₂O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu₂O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.

Original language	English
Pages (from-to)	104-108
Number of pages	5
Journal	Scripta Materialia
Volume	153
DOIs	https://doi.org/10.1016/j.scriptamat.2018.04.049
Publication status	Published - Aug 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 Acta Materialia Inc.

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Keywords

Hole-transporting material
Nitrogen doped cuprous oxide
Perovskite
Solar cell

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10.1016/j.scriptamat.2018.04.049

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title = "Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells",

abstract = "Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73\% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.",

keywords = "Hole-transporting material, Nitrogen doped cuprous oxide, Perovskite, Solar cell",

author = "Guifang Han and Du, \{Wen Han\} and An, \{Bao Li\} and Annalisa Bruno and Leow, \{Shin Woei\} and Cesare Soci and Sam Zhang and Mhaisalkar, \{Subodh G.\} and Nripan Mathews",

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year = "2018",

month = aug,

doi = "10.1016/j.scriptamat.2018.04.049",

language = "English",

volume = "153",

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journal = "Scripta Materialia",

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T1 - Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

AU - Han, Guifang

AU - Du, Wen Han

AU - An, Bao Li

AU - Bruno, Annalisa

AU - Leow, Shin Woei

AU - Soci, Cesare

AU - Zhang, Sam

AU - Mhaisalkar, Subodh G.

AU - Mathews, Nripan

PY - 2018/8

Y1 - 2018/8

N2 - Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.

AB - Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band-alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61-butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics.

KW - Hole-transporting material

KW - Nitrogen doped cuprous oxide

KW - Perovskite

KW - Solar cell

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EP - 108

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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