Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs

Riko I. Made; Chee Lip Gan

doi:10.1109/IPFA.2011.5992797

Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs

Riko I. Made^*, Chee Lip Gan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Mechanical testing on bonded processed wafers to assess their bond quality can be very costly, particularly on production wafers which have multilayer devices fabricated in the chips. A new non-destructive characterization method based on measured resonance frequency of the bond interface is proposed. Capacitive and resistive characteristics of the contact interface are amplified and utilized together with a designed external circuit that consists of an inductor and a resistor. This technique shows an improvement in measurement sensitivity to correlated mechanical adhesion strength, as compared to contact resistance measurement. It also eliminates stray resistances from line resistance and probing contact resistance.

Original language	English
Title of host publication	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
DOIs	https://doi.org/10.1109/IPFA.2011.5992797
Publication status	Published - 2011
Externally published	Yes
Event	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 - Incheon, Korea, Republic of Duration: Jul 4 2011 → Jul 7 2011

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
Country/Territory	Korea, Republic of
City	Incheon
Period	7/4/11 → 7/7/11

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

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10.1109/IPFA.2011.5992797

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Made, R. I., & Gan, C. L. (2011). Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 Article 5992797 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2011.5992797

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title = "Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs",

abstract = "Mechanical testing on bonded processed wafers to assess their bond quality can be very costly, particularly on production wafers which have multilayer devices fabricated in the chips. A new non-destructive characterization method based on measured resonance frequency of the bond interface is proposed. Capacitive and resistive characteristics of the contact interface are amplified and utilized together with a designed external circuit that consists of an inductor and a resistor. This technique shows an improvement in measurement sensitivity to correlated mechanical adhesion strength, as compared to contact resistance measurement. It also eliminates stray resistances from line resistance and probing contact resistance.",

author = "Made, \{Riko I.\} and Gan, \{Chee Lip\}",

year = "2011",

doi = "10.1109/IPFA.2011.5992797",

language = "English",

isbn = "9781457701597",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011",

note = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 ; Conference date: 04-07-2011 Through 07-07-2011",

}

Made, RI & Gan, CL 2011, Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs. in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011., 5992797, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011, Incheon, Korea, Republic of, 7/4/11. https://doi.org/10.1109/IPFA.2011.5992797

Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs. / Made, Riko I.; Gan, Chee Lip.
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992797 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Mechanical testing on bonded processed wafers to assess their bond quality can be very costly, particularly on production wafers which have multilayer devices fabricated in the chips. A new non-destructive characterization method based on measured resonance frequency of the bond interface is proposed. Capacitive and resistive characteristics of the contact interface are amplified and utilized together with a designed external circuit that consists of an inductor and a resistor. This technique shows an improvement in measurement sensitivity to correlated mechanical adhesion strength, as compared to contact resistance measurement. It also eliminates stray resistances from line resistance and probing contact resistance.

AB - Mechanical testing on bonded processed wafers to assess their bond quality can be very costly, particularly on production wafers which have multilayer devices fabricated in the chips. A new non-destructive characterization method based on measured resonance frequency of the bond interface is proposed. Capacitive and resistive characteristics of the contact interface are amplified and utilized together with a designed external circuit that consists of an inductor and a resistor. This technique shows an improvement in measurement sensitivity to correlated mechanical adhesion strength, as compared to contact resistance measurement. It also eliminates stray resistances from line resistance and probing contact resistance.

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Made RI, Gan CL. Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992797. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2011.5992797

Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs

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