Abstract
A study was conducted to demonstrate that a polymeric memory comprises an in situ synthesis strategy of gold nanoparticles in polystyrene-block-poly(4- vinylpyridine) (PS-b-P4VP). The study demonstrated that the system serves as a prototype for a generic memory device, using nanoparticles as floating gate charge storage centers and to be integrated into OTFT-based circuits. It was demonstrated that the block copolymer micelles are an excellent model system that is simple and forms a self-assembled ordered nanostructure, along with providing optimum control over nanoparticle size formation and isolation. It was observed that the response of the memory device is controlled by the applied voltage, where a spatial distribution of charge carriers can be retained in the nanoparticles.
Original language | English |
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Pages (from-to) | 2325-2331 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 12 |
DOIs | |
Publication status | Published - Jun 18 2008 |
Externally published | Yes |
ASJC Scopus Subject Areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering