Nonvolatile memory effects of ZnO nanoparticles embedded in an amorphous carbon layer

Fushan Li; Maziar Shakerzadeh; Bengkang Tay; Tailiang Guo; Taewhan Kim

doi:10.1143/JJAP.49.070209

Nonvolatile memory effects of ZnO nanoparticles embedded in an amorphous carbon layer

Fushan Li^*, Maziar Shakerzadeh, Bengkang Tay, Tailiang Guo, Taewhan Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance-voltage (C-V) measurements. C-V curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO₂/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance-time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the C-V results.

Original language	English
Pages (from-to)	702091-702093
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.070209
Publication status	Published - Jul 2010
Externally published	Yes

ASJC Scopus Subject Areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.49.070209

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abstract = "Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance-voltage (C-V) measurements. C-V curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance-time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the C-V results.",

author = "Fushan Li and Maziar Shakerzadeh and Bengkang Tay and Tailiang Guo and Taewhan Kim",

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AU - Li, Fushan

AU - Shakerzadeh, Maziar

AU - Tay, Bengkang

AU - Guo, Tailiang

AU - Kim, Taewhan

PY - 2010/7

Y1 - 2010/7

N2 - Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance-voltage (C-V) measurements. C-V curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance-time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the C-V results.

AB - Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance-voltage (C-V) measurements. C-V curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance-time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the C-V results.

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Nonvolatile memory effects of ZnO nanoparticles embedded in an amorphous carbon layer

Abstract

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