Novel concepts in functional resistive switching memories

Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

56 Citations (Scopus)

Abstract

Miniaturization of electronic devices to gain speed and reduce cost is no longer the only criterion for emerging technological needs. The devices with advanced functionalities such as flexibility, stretchability, transparency, and environmental robustness have significant advantages and added value in different areas for future electronics' applications. Data storage devices are one of the critical and fundamental components in fully integrated electronics. The functional resistive switching random access memory (RRAM) device, which is one of the most promising candidates for the next generation of non-volatile memory for data storage, has attracted immense attention because of its speed, ease of fabrication and scalability. In this paper, the recent progress, materials' selection, device architecture, and the emerging multi-functional RRAM devices are reviewed.

Original languageEnglish
Pages (from-to)9637-9645
Number of pages9
JournalJournal of Materials Chemistry C
Volume4
Issue number41
DOIs
Publication statusPublished - 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2016.

ASJC Scopus Subject Areas

  • General Chemistry
  • Materials Chemistry

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