On-chip nonvolatile tunable second-harmonic-generation through integration of NbOBr2

Xiangxin Gong*, Ruihuan Duan*, Tina Xin Guo, Wenduo Chen, Zheng Liu, Sanghoon Chae

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of second harmonic generation (SHG) into silicon photonics (SiPh) is limited by the lack of CMOS-compatible nonlinear material. And fixed response without tunability significantly obstacle the practical application of NLO process. The superior 2D material with specific stacking order enable intrinsic second-order susceptibility (χ(2)) which stems from the centrosymmetry-breaking structure. Although some transition metal dichalcogenides (TMDCs) and hexagonal boron nitride (hBN) has enabled great SHG response, their even-odd layer-dependent SHG response limit the promise for integration to SiPh platform. Furthermore, the lack of tunability in system curtail the further application of NLO process. Here, we demonstrate the first electrically tunable on-chip nonlinear photonic device with efficient SHG conversion from near-infrared light, enabled by integrating 2D niobium oxide dibromide (NbOBr2) into an optical cavity-based SiN photonic platform. The SHG response comes from the combination of NbOBr2’s χ(2) and on-chip cavity’s enhancement for pump light, and the nonvolatile tunability stems from the in-plane ferroelectricity-induced loss change in cavity.

Original languageEnglish
Title of host publication2D Photonic Materials and Devices VIII
EditorsArka Majumdar, Carlos M. Torres, Hui Deng
PublisherSPIE
ISBN (Electronic)9781510684843
DOIs
Publication statusPublished - 2025
Externally publishedYes
Event2D Photonic Materials and Devices VIII 2025 - San Francisco, United States
Duration: Jan 27 2025Jan 29 2025

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13368
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2D Photonic Materials and Devices VIII 2025
Country/TerritoryUnited States
CitySan Francisco
Period1/27/251/29/25

Bibliographical note

Publisher Copyright:
© 2025 SPIE.

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • in-plane ferroelectricity
  • Integrated silicon photonics (SiPh) devices
  • nonvolatile tunability
  • second harmonic generation (SHG)

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