Online condition monitoring of IGBT modules using gate-charge identification

Mohamed Halick Mohamed Sathik, Sundararajan Prasanth, Firman Sasongko, Josep Pou, Amit Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Power converters have been widely used in safety-critical applications, such as marine, aerospace, electric vehicles, and renewable energy, which require much more stringent reliability performance than most industrial applications. Most of these power converters use an insulated gate bipolar transistor as switching devices because of their high voltage and high current capabilities. Reliability of a power converter is mainly verbalized by the failure rate of power modules. Therefore, condition monitoring of IGBT module is crucial to give early sign of device degradations in a power converter. This paper presents a method for detecting degradations or an early failure in the IGBT module by identifying the dynamic change in the gate-charge. An ageing setup using a power cycling machine has been done to trigger degradation and failures in several IGBT samples. The results from the accelerated ageing test indicate that the gate-charge of the IGBTs increases with accelerated ageing over the time period.

Original languageEnglish
Title of host publication34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2702-2707
Number of pages6
ISBN (Electronic)9781538683309
DOIs
Publication statusPublished - May 24 2019
Externally publishedYes
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: Mar 17 2019Mar 21 2019

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2019-March

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Country/TerritoryUnited States
CityAnaheim
Period3/17/193/21/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Keywords

  • Gate-charge
  • Gate-oxide failure
  • Insulated gate bipolar transistor
  • Power cycling test

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