Abstract
Power converters have been widely used in safety-critical applications, such as marine, aerospace, electric vehicles, and renewable energy, which require much more stringent reliability performance than most industrial applications. Most of these power converters use an insulated gate bipolar transistor as switching devices because of their high voltage and high current capabilities. Reliability of a power converter is mainly verbalized by the failure rate of power modules. Therefore, condition monitoring of IGBT module is crucial to give early sign of device degradations in a power converter. This paper presents a method for detecting degradations or an early failure in the IGBT module by identifying the dynamic change in the gate-charge. An ageing setup using a power cycling machine has been done to trigger degradation and failures in several IGBT samples. The results from the accelerated ageing test indicate that the gate-charge of the IGBTs increases with accelerated ageing over the time period.
Original language | English |
---|---|
Title of host publication | 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 2702-2707 |
Number of pages | 6 |
ISBN (Electronic) | 9781538683309 |
DOIs | |
Publication status | Published - May 24 2019 |
Externally published | Yes |
Event | 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States Duration: Mar 17 2019 → Mar 21 2019 |
Publication series
Name | Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC |
---|---|
Volume | 2019-March |
Conference
Conference | 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 |
---|---|
Country/Territory | United States |
City | Anaheim |
Period | 3/17/19 → 3/21/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
Keywords
- Gate-charge
- Gate-oxide failure
- Insulated gate bipolar transistor
- Power cycling test