Online junction temperature for off-the-shelf power converters

Mohamed Halick Mohamed Sathik, Sundararajan Prasanth, Firman Sasongko, Sampath Kumar Padmanabhan, Josep Pou, Rejeki Simanjorang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Recent growth of power converter market has been driven largely by the growing demand for an efficient way to convert and distribute energy in the field of electrical vehicles, renewable energy, and aerospace and marine applications. However, failures of power semiconductor devices can reduce the reliability of power converters. It is well-known that the reliability of power semiconductor devices is related to the device junction temperatures. This paper presents an online temperature estimation model for off-the-shelf power converters that estimates the junction temperatures of insulated gate bipolar transistors (IGBTs) in real time. The proposed online model is based on power loss characteristics and thermal-impedance variation for each interval in the operating states of IGBTs. A three-phase power converter consisting of three half-bridge IGBT modules has been built as an experimental test setup to verify the proposed method. To validate the accuracy of the proposed method, the estimated temperatures are compared to the results from temperature measurement by using a thermocouple and an infrared camera.

Original languageEnglish
Title of host publicationAPEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2769-2774
Number of pages6
ISBN (Electronic)9781538611807
DOIs
Publication statusPublished - Apr 18 2018
Externally publishedYes
Event33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, United States
Duration: Mar 4 2018Mar 8 2018

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2018-March

Conference

Conference33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
Country/TerritoryUnited States
CitySan Antonio
Period3/4/183/8/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Keywords

  • Insulated Gate Bipolar Transistor (IGBT)
  • Junction temperature
  • Power loss
  • Switching loss
  • Transient thermal impedance

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