Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals

Feng Gu; Wenjuan Huang; Shufen Wang; Xing Cheng; Yanjie Hu; Pooi See Lee

doi:10.1039/c4cp01655f

Open-circuit voltage improvement in tantalum-doped TiO₂ nanocrystals

Feng Gu^*, Wenjuan Huang, Shufen Wang, Xing Cheng, Yanjie Hu, Pooi See Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Enhanced electron concentration derived from Ta⁵⁺ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.

Original language	English
Pages (from-to)	25679-25683
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	16
Issue number	47
DOIs	https://doi.org/10.1039/c4cp01655f
Publication status	Published - Nov 13 2014
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1039/c4cp01655f

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title = "Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals",

abstract = "Enhanced electron concentration derived from Ta5+ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.",

author = "Feng Gu and Wenjuan Huang and Shufen Wang and Xing Cheng and Yanjie Hu and Lee, {Pooi See}",

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doi = "10.1039/c4cp01655f",

language = "English",

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T1 - Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals

AU - Gu, Feng

AU - Huang, Wenjuan

AU - Wang, Shufen

AU - Cheng, Xing

AU - Hu, Yanjie

AU - Lee, Pooi See

PY - 2014/11/13

Y1 - 2014/11/13

N2 - Enhanced electron concentration derived from Ta5+ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.

AB - Enhanced electron concentration derived from Ta5+ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.

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DO - 10.1039/c4cp01655f

M3 - Article

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Open-circuit voltage improvement in tantalum-doped TiO₂ nanocrystals

Abstract

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