Optical and electrical applications of ZnS xSe 1-x nanowires-network with uniform and controllable stoichiometry

Junpeng Lu; Hongwei Liu; Cheng Sun; Minrui Zheng; Mathews Nripan; Gin Seng Chen; G. Mhaisalkar Subodh; Xinhai Zhang; Chorng Haur Sow

doi:10.1039/c2nr11459c

Optical and electrical applications of ZnS _xSe _1-x nanowires-network with uniform and controllable stoichiometry

Junpeng Lu, Hongwei Liu, Cheng Sun, Minrui Zheng, Mathews Nripan, Gin Seng Chen, G. Mhaisalkar Subodh, Xinhai Zhang, Chorng Haur Sow^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Single crystalline ternary ZnS _xSe _1-x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.

Original language	English
Pages (from-to)	976-981
Number of pages	6
Journal	Nanoscale
Volume	4
Issue number	3
DOIs	https://doi.org/10.1039/c2nr11459c
Publication status	Published - Feb 7 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

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@article{5586b780a53a45a6b38ae08334535020,

title = "Optical and electrical applications of ZnS xSe 1-x nanowires-network with uniform and controllable stoichiometry",

abstract = "Single crystalline ternary ZnS xSe 1-x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.",

author = "Junpeng Lu and Hongwei Liu and Cheng Sun and Minrui Zheng and Mathews Nripan and Chen, {Gin Seng} and Subodh, {G. Mhaisalkar} and Xinhai Zhang and Sow, {Chorng Haur}",

year = "2012",

month = feb,

day = "7",

doi = "10.1039/c2nr11459c",

language = "English",

volume = "4",

pages = "976--981",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "3",

}

TY - JOUR

T1 - Optical and electrical applications of ZnS xSe 1-x nanowires-network with uniform and controllable stoichiometry

AU - Lu, Junpeng

AU - Liu, Hongwei

AU - Sun, Cheng

AU - Zheng, Minrui

AU - Nripan, Mathews

AU - Chen, Gin Seng

AU - Subodh, G. Mhaisalkar

AU - Zhang, Xinhai

AU - Sow, Chorng Haur

PY - 2012/2/7

Y1 - 2012/2/7

N2 - Single crystalline ternary ZnS xSe 1-x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.

AB - Single crystalline ternary ZnS xSe 1-x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.

UR - http://www.scopus.com/inward/record.url?scp=84863016388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863016388&partnerID=8YFLogxK

U2 - 10.1039/c2nr11459c

DO - 10.1039/c2nr11459c

M3 - Article

AN - SCOPUS:84863016388

SN - 2040-3364

VL - 4

SP - 976

EP - 981

JO - Nanoscale

JF - Nanoscale

IS - 3

ER -

Optical and electrical applications of ZnS _xSe _1-x nanowires-network with uniform and controllable stoichiometry

Abstract

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